Summary: Superlattices and Microstructures, Vol. 23, No. 3/4, 1998
Kinetic modelling of electron tunneling processes in quantum dots
coupled to field-effect transistors
Department of Electrical Engineering and Computer Science,
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Sandip Tiwari, J. J. Welser
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.
Transport of electrons in semiconductor nano-structures exhibits many features that are a
consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a
metal-oxide-semiconductor transistor's channel region is one example of such a structure
with utility as a dense semiconductor memory. The memory state of this unit cell is a function
of the number of electrons stored in the quantum dot and is sensed by the conduction in
the channel. We describe a kinetic approach, based on a master equation, for modelling the
injection and ejection of electrons into and from the quantum dot, and compare numerical
results with experimental results for the silicon/silicon dioxide system where such memory
structures have been achieved.
c 1998 Academic Press Limited
Key words: quantum dot, nano-crystal, tunneling, memory, field-effect transistor, charging,
discharging, modeling, rate equation, master equation.