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Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon
 

Summary: Comparison of structure and properties of femtosecond and nanosecond
laser-structured silicon
C. H. Crouch,a)
J. E. Carey, J. M. Warrender, M. J. Aziz, and E. Mazurb)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
F. Y. GeŽnin
Lawrence Livermore National Laboratory, Livermore, California 94550
Received 8 August 2003; accepted 7 January 2004
We compare the optical properties, chemical composition, and crystallinity of silicon
microstructures formed in the presence of SF6 by femtosecond laser irradiation and by nanosecond
laser irradiation. In spite of very different morphology and crystallinity, the optical properties and
chemical composition of the two types of microstructures are very similar. The structures formed
with femtosecond fs pulses are covered with a disordered nanocrystalline surface layer less than
1 m thick, while those formed with nanosecond ns pulses have very little disorder. Both
ns-laser-formed and fs-laser-formed structures absorb near-infrared 1.1­2.5 m radiation strongly
and have roughly 0.5% sulfur impurities. © 2004 American Institute of Physics.
DOI: 10.1063/1.1667004
Many types of micrometer-scale surface structures de-
velop spontaneously on silicon surfaces after repeated pulsed
laser irradiation.1

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science