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Dielectric properties of MgO-doped compositionally graded multilayer barium strontium titanate films
 

Summary: Dielectric properties of MgO-doped compositionally graded multilayer
barium strontium titanate films
M. W. Cole,1,a
E. Ngo,1
S. Hirsch,1
M. B. Okatan,2
and S. P. Alpay2,b
1
U. S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground,
Maryland 21005, USA
2
Materials Science and Engineering Program, CMBE Department, Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269, USA
Received 12 December 2007; accepted 26 January 2008; published online 20 February 2008
We have grown 5 mol % MgO-doped multilayered Ba1-xSrxTiO3 BST films having a nominal
thickness of 220 nm with compositions of each layer as BST60/40, BST75/25, and BST90/10
upgraded . We also fabricated undoped upgraded BST and uniform BST60/40 films for
comparison. Results show that Mg-doping improves dielectric loss tan =0.008 and yields better
surface roughness 3.1 nm compared to undoped upgraded BST. Mg-doped films displayed
excellent temperature stability with temperature coefficient of capacitances of -0.94 and

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science