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Pressure and temperature effects on optical transitions in cubic GaN Z. X. Liu, A. R. Gon~i,a)
 

Summary: Pressure and temperature effects on optical transitions in cubic GaN
Z. X. Liu, A. R. Gon~i,a)
and K. Syassenb)
Max-Planck-Institut fu¨r Festko¨rperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany
H. Siegle and C. Thomsen
Institut fu¨r Festko¨rperphysik, Technische Universita¨t Berlin, 10623 Berlin, Germany
B. Scho¨ttker, D. J. As, and D. Schikora
Fachbereich 6 Physik, Universita¨t Paderborn, 33095 Paderborn, Germany
Received 18 November 1998; accepted for publication 13 April 1999
Pressure and temperature effects on optical transitions in cubic GaN grown on a GaAs substrate
have been studied by photoluminescence PL spectroscopy at hydrostatic pressures up to 9 GPa 10
K and as a function of temperature 10­300 K at ambient pressure. The dominant emissions at 10
K and ambient pressure are assigned to the bound-exciton transition zero-phonon line , the
donor-acceptor-pair DAP emission, and, tentatively, to the first three LO-phonon replicas of the
bound exciton. These PL features shift to higher energy with increasing pressure. The pressure
coefficients indicate that the observed recombination processes involve states which are closely
related to the band edges. Temperature-induced evolutions from bound to free-exciton FE
transition and DAP emission to free-to-bound transition are resolved. The binding energies of the
FE and donor and acceptor levels in cubic GaN have been determined from the temperature and
power-density dependence of the PL emission energies. © 1999 American Institute of Physics.

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics