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Summary: Point defect engineered Si
sub-bandgap light-emitting diode
Jiming Bao1
, Malek Tabbal1,2
, Taegon Kim1
, Supakit Charnvanichborikarn3
,
James S. Williams3
, Michael. J. Aziz1*
and Federico Capasso1*
1
School of Engineering and Applied Sciences, Harvard University
Cambridge, MA, 02138
2
Department of Physics, American University of Beirut, Riad El Solh
Beirut, 1107 2020, Lebanon
3
Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia, 0200
*Corresponding authors: maziz@harvard.edu, capasso@deas.harvard.edu
Abstract: We present a novel approach to enhance light emission in Si and
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