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Characterization and Modeling of Thermal Effects in Sub-Micron InP DHBTs

Summary: Characterization and Modeling of Thermal Effects in
Sub-Micron InP DHBTs
James Chingwei Li*
, Tahir Hussain*, Donald A. Hitko*, Peter M. Asbeck
, and Marko Sokolich*
HRL Laboratories, LLC, Malibu, CA, USA

ECE Department, University of California at San Diego, La Jolla, CA, USA
Abstract ­ S-parameter measurements performed on 400GHz InP
DHBTs, with 250nm and 400nm wide emitters, show that an 8-10%
increase in peak fT can be achieved when the ambient temperature
is reduced from +25ºC to -50ºC. This strong temperature
dependence of device performance indicates that thermal modeling
will play a critical role in device and circuit design. Using the
DESSIS simulator, a 3D thermal model was calibrated
to these sub-micron 400GHz InP DHBTs for use in technology
development. The 3D model is sufficiently complex to allow the


Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego


Collections: Engineering