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Effect of Fe2O3 on the transport and magnetic properties of half metallic Fe3O4
 

Summary: Effect of Fe2O3 on the transport and magnetic properties of half
metallic Fe3O4
D. Tripathy and A. O. Adeyeyea
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, Singapore 117576, Singapore
C. B. Boothroyd
Institute of Materials Research and Engineering, 3, Research Link, Singapore 117602, Singapore
Presented on 1 November 2005; published online 21 April 2006
We present a systematic study of the transport and magnetic properties of half metallic Fe3O4 films
grown on Si 100 substrates with a Fe2O3 buffer layer using electron beam deposition technique.
Transmission electron microscope images show the presence of small grains that are well separated
by grain boundaries in our polycrystalline films. We observed that the Verwey transition does not
appear for our Fe3O4 films and tunneling of spin polarized electrons across grain boundaries
dominates the transport properties of the films. Magnetic measurements show a reduced
magnetization in our films which does not saturate even at high fields. Coercivity of the films
increases with decreasing temperature, suggesting the existence of additional anisotropy at low
temperatures. Magnetoresistance curves show linear behavior at high fields which may be attributed
to second order tunneling through intermediate states in the grain boundaries. At lower fields, the
magnetoresistance behavior is governed by direct tunneling. 2006 American Institute of Physics.
DOI: 10.1063/1.2170981

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science