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Analytical Formulae of Quantum-Mechanical Electron Density in Inversion Layer in Planar MOSFETs
 

Summary: Analytical Formulae of Quantum-Mechanical Electron Density in
Inversion Layer in Planar MOSFETs
Shigeyasu Uno, Henok Abebe
, and Ellis Cumberbatch
Department of Electrical Engineering and Computer Science
Graduate School of Engineering, Nagoya University
Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Tel:+81-52-789-2794, Fax:+81-52-789-3139
December 24, 2005
Analytical formulae for electro-static potential and
electron density profile for n-type planar MOSFETs
are obtained by solving equations based on the den-
sity gradient model using a perturbation theory. Our
formulae reproduce exact numerical solutions with ex-
cellent accuracy without any fitting parameters or ex-
pensive computation time.
I. Introduction
The electron density in inversion layer in planar MOS-
FETs are known to differ from that of classical pre-
dictions. Up to now several methods to describe such

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics