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2004 International Conference on Indium Phoshide and Related Materials ConferenceProceedings
 

Summary: 2004 International Conference on Indium Phoshide and Related Materials
ConferenceProceedings
16th IPRM 31, May -4, June 2004 Kagoshima, Japan
Bandgap Engineering of GaInNP on GaAs(001)
for Electronic Applications
1l:OO -11~30
Th62-1
C.W. Tu, Y.G. Hong, R. Andre*, R.J. Welly**, and P.M.Asbeck
Department of Electrical and Computer Engineering
University of California, San Diego
La Jolla, CA 92093-0407, USA
Abstract
Nitrogen incorporation dramatically reduces the Gal_Jn,P band gap. Using the red shift
of the photoluminescencespectrum of Gao.46Ino.54No.oosPo,~~/GaAsquantum wells, which
indicates less quantum confinement, we estimatethe valence band offset to be about 97%
of the total band gap difference. N incorporation significantly reduces the free-electron
concentration and mobility, and the free-electron concentration of G~.48~0.52~0.~5P0.995
decreases dramatically with high-temperature annealing (800 "C),from 4 . 4 ~10'' to
8 . 0 ~ 1 0 ' ~cuie3.This is believed to be due to passivation of Si by N through the formation
of Si-N pairs. Therefore, GaInNP is more suitable to be a thin layer as the hole-blocking

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering