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phys. stat. sol. (c) 1, No. S2, S202S209 (2004) / DOI 10.1002/pssc.200405141 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
 

Summary: phys. stat. sol. (c) 1, No. S2, S202­S209 (2004) / DOI 10.1002/pssc.200405141
© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Photonic devices based on wide gap semiconductors
for room temperature polariton emission
A. Pawlis*
, D. J. As, D. Schikora, J. Schörmann, and K. Lischka
Faculty of Science, Department of Physics, University of Paderborn, Warburger Str. 100,
33098 Paderborn, Germany
Received 25 March 2004, revised 15 June 2004, accepted 17 June 2004
Published online 1 September 2004
PACS 71.35.Gg, 71.35.­y, 71.36.+c, 71.55.Gs, 78.30.Fs
Planar semiconductor microcavities have found increasing attention since they allow to enhance and con-
trol the interaction between light and excitons. When the coupling between photon and exciton is strong
enough, polaritons are formed which are observed in a pronounced Rabi-splitting in the cavity spectra.
The strong exciton-light coupling regime, necessesary for polariton-based applications depends on the os-
cillator strength and the exciton binding energy. The wide-gap II­VI (CdTe,ZnSe and CdSe) as well as
the group III-nitrides (GaN,InN and AlN) semiconductors excellently fulfil these conditions. We observed
a large Rabi-splitting (about 44 meV) with ZnSe-based semiconductor microcavities containing four
strained (Zn,Cd)Se quantum wells and ZnS/YF3 distributed Bragg-reflectors. Measurements of the reflec-
tivity and of the photoluminescence revealed clear evidence of the strong coupling regime. We also report

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics