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540 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, APRIL 2002 Demonstration of Low-Knee Voltage
 

Summary: 540 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, APRIL 2002
Demonstration of Low-Knee Voltage
High-Breakdown GaInP Double HBTs Using
Novel Compound Collector Design
Peter J. Zampardi, C. E. Chang, Member, IEEE, S. Fitzsimmons, R. L. Pierson, B. T. McDermott, P. F. Chen,
and Peter Asbeck, Fellow, IEEE
Abstract--We have demonstrated a heterojunction bipolar tran-
sistor using a novel compound collector (CCHBT) design that al-
lows a low-knee voltage and high-breakdown voltage to be obtained
simultaneously. The novel aspect of this design is to use a short
wide band-gap collector only over a narrow portion of the collector,
where the field is highest. This allows support of high fields while
maintaining a low overall collector resistance due to the higher mo-
bility of the narrow band-gap material. We demonstrate an offset
voltage reduction of about 35% and a knee-voltage reduction of
30%, while increasing both BVCEO and BVCBO by 20 and 27%,
respectively, compared to a single heterojunction device of the same
collector length.
I. INTRODUCTION
GaInP/GaAs heterojunction bipolar transistors (HBTs)

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering