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Summary: ANALYTICAL MODELING AND NUMERICAL SIMULATION OF
CAPACITIVE SILICON BULK ACOUSTIC RESONATORS
C. Casinovi, X Gao, and F. Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, Georgia, USA
ABSTRACT
This paper introduces two newly developed models
of capacitive silicon bulk acoustic resonators (SiBARs).
The first model is analytical and is obtained from an
approximate solution of the linear elastodynamics
equations for the SiBAR geometry. The second is
numerical and is based on finite-element, multi-physics
simulation of both acoustic wave propagation in the
resonator and electromechanical transduction in the
capacitive gaps of the device. This latter model makes it
possible to compute SiBAR performance parameters that
cannot be obtained from the analytical model, e.g. the
relationship between transduction area and insertion loss.
Comparisons with measurements taken on a set of silicon
resonators fabricated using electron-beam lithography
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