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Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
 

Summary: Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van
Hove singularities
M. Röppischer,1,a
R. Goldhahn,2
G. Rossbach,2
P. Schley,2
C. Cobet,1
N. Esser,1
T. Schupp,3
K. Lischka,3
and D. J. As3
1
Department Berlin, ISAS--Institute for Analytical Sciences, Albert-Einstein-Str. 9, 12489 Berlin, Germany
2
Institut für Physik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany
3
Department of Physics, University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
Received 1 September 2009; accepted 3 September 2009; published online 12 October 2009
The dielectric function DF of phase-pure cubic AlN films is determined by ellipsometry. The sharp
onset of the imaginary part of the DF defines the direct absorption edge corresponding to a

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics