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Magnetization reversal process in elongated Co rings with engineered X. S. Gao,1
 

Summary: Magnetization reversal process in elongated Co rings with engineered
defects
X. S. Gao,1
A. O. Adeyeye,2,a
and C. A. Ross3
1
Singapore-MIT Alliance, 4 Engineering Drive 3, National University of Singapore, Singapore 117576,
Singapore
2
Information Storage Materials Laboratory, Department of Electronic and Computer Engineering,
4 Engineering Drive 3, National University of Singapore, Singapore 117576, Singapore
3
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge,
Massachusetts 02139, USA
Received 20 November 2007; accepted 18 December 2007; published online 18 March 2008
We report a significant modification of the magnetization reversal process in thin film rings with
engineered defects created by a focused ion beam. Using magnetic force microscopy, with in situ
in-plane field, we observe that the traditional onion-vortex transition that occurs in defect-free rings
can be suppressed, and the reversal instead takes place through domain wall motion. We have also
investigated the effects of defect size, location, and distribution on the overall magnetization state.

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science