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Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission
 

Summary: Monte Carlo calculations for metal-semiconductor hot-electron injection
via tunnel-junction emission
Ian Appelbaum*
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138, USA
and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
V. Narayanamurti
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge,
Massachusetts 02138, USA
Received 8 July 2004; revised manuscript received 8 October 2004; published 18 January 2005
We present a detailed description of a scheme to calculate the injection current for metal-semiconductor
systems using tunnel-junction electron emission. We employ a Monte Carlo framework for integrating over
initial free-electron states in a metallic emitter and use interfacial scattering at the metal-semiconductor inter-
face as an independent parameter. These results have implications for modeling metal-base transistors and
ballistic electron emission microscopy and spectroscopy.
DOI: 10.1103/PhysRevB.71.045320 PACS number s : 73.23. b, 72.10.Bg
I. INTRODUCTION
A tunnel junction consists of two conductors separated by
an insulating potential barrier. When an electrical voltage
bias is applied between the two conductors, electrons can
convert their potential energy gained by the bias into kinetic

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science