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190 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 3, FEBRUARY 1, 2008 Passively Mode-Locked High-Power (210 mW)
 

Summary: 190 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 3, FEBRUARY 1, 2008
Passively Mode-Locked High-Power (210 mW)
Semiconductor Lasers at 1.55-m Wavelength
Faisal R. Ahmad and Farhan Rana, Member, IEEE
Abstract--We report on the generation of stable passively mode-
locked pulses at 1.55-m wavelength from high-power electrically
pumped, large transverse mode semiconductor diode lasers. Op-
tical pulses as short as 5.8 ps were measured directly from the
laser. This is the shortest pulsewidth reported (without external
compression) from a monolithic mode-locked slab coupled optical
waveguide laser. The highest average power measured in mode-
locked operation was 212 mW albeit the pulsewidths were larger. It
was also found that length of the laser changes the power­current
efficiency with the largest recorded efficiency of 165 mW/A.
Index Terms--Mode-locking, quantum-well-based semicon-
ductor lasers.
I. INTRODUCTION
THERE HAS been a growing interest in high-power,
electrically pumped mode-locked lasers [1], [2]. These
devices have great utility as compact low noise sources for

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering