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SINGLE-MASK REDUCED-GAP CAPACITIVE MICROMACHINED DEVICES Reza Abdolvand and Farrokh Ayazi
 

Summary: SINGLE-MASK REDUCED-GAP CAPACITIVE MICROMACHINED DEVICES
Reza Abdolvand and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, USA
ABSTRACT
This paper presents single mask capacitive micromechanical
devices with dry-etched deep-sub-micron gaps. Thick oxide
mask layer with sub-micron openings suitable for etching
deep narrow trenches is fabricated using a gap-reduction
technique. Less than 100nm openings are realized while the
original feature sizes are defined by conventional optical
lithography. This method combined with modified high
aspect ratio DRIE recipes shows a great potential for batch-
fabrication of high-frequency low-impedance single crystal
silicon resonators on SOI substrates. Results measured from
various resonator structures with frequencies as high as 205
MHz, Q values as high as 68,000, and 200nm gaps with
aspect ratio of 60:1 are demonstrated.
1. INTRODUCTION
Deep-sub-micron vertical gaps are required in certain

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering