Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Effect of thermal stresses on the dielectric properties of strontium titanate J. Zhang, C. V. Weiss, and S. P. Alpaya)
 

Summary: Effect of thermal stresses on the dielectric properties of strontium titanate
thin films
J. Zhang, C. V. Weiss, and S. P. Alpaya)
Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut,
Storrs, Connecticut 06269, USA
(Received 18 May 2011; accepted 8 July 2011; published online 26 July 2011)
We develop a quantitative thermodynamic model to understand the role of thermal stresses on the
dielectric permittivity and tunability of (001)-textured polycrystalline monodomain strontium
titanate (SrTiO3) films. This methodology is used to compute the dielectric constant and tunability
of SrTiO3 films on Si, c-sapphire, LaAlO3, and MgO substrates. Results show that dielectric
properties of SrTiO3 depend strongly on the growth/processing temperature TG. For substrates such
as MgO that induce compressive in-plane thermal stresses, the dielectric response of SrTiO3 is
enhanced. However, for SrTiO3 films on IC-compatible substrates (Si and c-sapphire), thermal
stresses can significantly degrade the dielectric permittivity and tunability. VC 2011 American
Institute of Physics. [doi:10.1063/1.3617430]
In thin films, in-plane strains develop in the film due to
thermal stresses that arise from differences between the ther-
mal expansion coefficients (TECs) of the film and the sub-
strate upon cooling from a growth/processing temperature
(TG) to ambient temperatures. In ferroelectric (FE) films,

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science