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Molecular Beam Epitaxy of Cubic Group III-Nitrides on free-standing 3C-SiC substrates
 

Summary: Molecular Beam Epitaxy of Cubic Group III-Nitrides on
free-standing 3C-SiC substrates
D.J. As1,a
, S. Potthast1
, J. Schörmann1
, S.F. Li1
, K. Lischka1
,
H. Nagasawa2
, M. Abe2
1
University of Paderborn, Department of Physics, Warburger Strasse 100, 33098 Paderborn,
Germany
2
HOYA Advanced Semiconductor Technologies Co., Ltd., 1-177-16 Tanashioda, Sagamihara,
Kanagawa 229-1125, Japan
a
d.as@uni-paderborn.de
Keywords: MBE, cubic GaN, cubic AlGaN/GaN and InGaN/GAN MQW, 3C-SiC
Abstract. Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics