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Carrier Transport in Two-Dimensional Graphene Layers E. H. Hwang, S. Adam, and S. Das Sarma
 

Summary: Carrier Transport in Two-Dimensional Graphene Layers
E. H. Hwang, S. Adam, and S. Das Sarma
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA
(Received 5 October 2006; published 3 May 2007)
Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by
random charged impurity centers with density ni. Excellent quantitative agreement is obtained (for carrier
density n > 1012 cm2) with existing experimental data. The conductivity scales linearly with n=ni in the
theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and
the high-density saturation of conductivity for the highest mobility samples. We argue that the experi-
mentally observed saturation of conductivity at low density arises from the charged impurity induced
inhomogeneity in the graphene carrier density which becomes severe for n & ni 1012
cm2
.
DOI: 10.1103/PhysRevLett.98.186806 PACS numbers: 73.40.c, 72.10.d, 81.05.Uw
Recent experimental observation of the density depen-
dent 2D carrier transport in single monolayers of graphene
is an important, perhaps seminal, development in low
dimensional electronic phenomena in nanostructures [1
5]. First, the gated 2D graphene systems could potentially
become multifunctional high speed and high-power tran-

  

Source: Adam, Shaffique - Condensed Matter Theory Center, University of Maryland at College Park

 

Collections: Physics