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Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys Michael J. Aziz* and Yuechao Zhao
 

Summary: Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys
Michael J. Aziz* and Yuechao Zhao
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
Hans-J. Gossmann
AMD, Hopewell Junction, New York 12533, USA
Salman Mitha and Stephen P. Smith
Charles Evans and Associates, Sunnyvale, California 94086, USA
David Schiferl
Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Received 9 September 2005; published 2 February 2006
The hydrostatic pressure dependence of the diffusivity of B and Sb in Si and of B in Si89Ge11 has been
measured. The diffusivity of Sb in Si is retarded by pressure, characterized by an apparent activation volume
of V~
Sb= +0.060.04 times the Si atomic volume . The diffusivity of B is enhanced by pressure, characterized
by an apparent activation volume of V~
B of -0.160.05 . The diffusivity of B in strain-relaxed Si89Ge11 is
imperceptibly pressure dependent, characterized by an apparent activation volume of +0.030.03 . V~
B in Si
is close to the activation volume for the interstitialcy mechanism calculated for B in Si by ab initio methods.
V~

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science