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Fully-Differential Mechanically-coupled PZT-on-Silicon Filters
 

Summary: Fully-Differential Mechanically-coupled PZT-on-
Silicon Filters
Hengky Chandrahalim and Sunil A. Bhave
School of Electrical and Computer Engineering
Cornell University
Ithaca, USA
Ronald G. Polcawich, Jeff S. Pulskamp, Daniel Judy,
Roger Kaul and Madan Dubey
US Army Research Laboratory
Adelphi, USA
Abstract--This paper reports on the design of a 2-pole differential
MEMS filter using mechanically-coupled overtone width-
extensional resonators. The resonators and filters are fabricated
in the 10 m thick device layer of a SOI wafer and transduced by
a 0.5 m PZT (lead zirconate titanate) thin film deposited on the
top surface of the wafer. A 206.3 MHz overtone width-extensional
filter is demonstrated with 653 kHz bandwidth, -25 dB insertion
loss (IL) and -62 dB stop-band rejection in air. Uncompensated
temperature coefficient of frequency (TCF) of -16 ppm/C and
third-order input intercept point (IIP3) of +52.5 dBm are

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering