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Effects of buffer layer on the electronic properties of half-metallic Fe3O4 S. Jain and A. O. Adeyeyea
 

Summary: Effects of buffer layer on the electronic properties of half-metallic Fe3O4
S. Jain and A. O. Adeyeyea
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National
University of Singapore, Singapore
C. B. Boothroyd
Institute of Materials Research and Engineering, 3, Research link, Singapore
Presented on 8 November 2004; published online 4 May 2005
We have investigated in a systematic way the effect of buffer layer materials on the metal-insulator
transition and also on the IV characteristics of half-metallic Fe3O4 films. Using an electron-beam
deposition technique, we have grown 150 nm of Fe3O4 films directly on Si 001 substrate, on
20-nm Fe2O3 and 20-nm SiO2 buffer layers. We observed that for a fixed Fe3O4 film thickness, the
metal-insulator transition is strongly dependent on the buffer layer materials. From the IV
characteristics, we observed an insulator-like gap structure in the density of states below the
transition temperature which disappears gradually with increasing temperature. 2005 American
Institute of Physics. DOI: 10.1063/1.1855205
INTRODUCTION
Half-metallic ferromagnetic materials, characterized by
100% spin polarization and having only one spin subband at
the Fermi level, have been the subject of interest for more
than a decade.14

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science