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Summary: Ferromagnetic Ga1ÀxMnxAs produced by ion implantation
and pulsed-laser melting
M. A. Scarpullaa)
and O. D. Dubonb)
Department of Materials Science & Engineering, University of California at Berkeley, Berkeley,
California 94720 and Lawrence Berkeley National Laboratory, Berkeley, California 94720
K. M. Yu and O. Monteiro
Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. R. Pillai and M. J. Aziz
Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
M. C. Ridgway
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering,
Australian National University, Canberra, Australia
Received 26 September 2002; accepted 3 January 2003
We demonstrate the formation of ferromagnetic Ga1 xMnxAs films by Mn ion implantation into
GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the
epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective
Curie temperature up to 29 K for samples with a maximum Mn concentration of x 0.03. A
remanent magnetization persisting above 85 K has been observed for samples with x 0.10, in
which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in
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