Summary: Schottky barrier engineering in III­V nitrides via the piezoelectric effect
E. T. Yu,a)
X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, and S. S. Lau
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla,
California 92093-0407
G. J. Sullivan
Rockwell International Science Center, Thousand Oaks, California 91358
K. S. Boutros and J. M. Redwing
Epitronics/ATMI, Phoenix, Arizona 85027-2726
Received 6 April 1998; accepted for publication 25 July 1998
A method for enhancing effective Schottky barrier heights in III­V nitride heterostructures based on
the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1 xN
barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess
significantly larger effective barrier heights than those for AlxGa1 xN, and the influence of
composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure
optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement
of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and
reverse-bias leakage are observed in current­voltage measurements performed on Schottky diodes.
© 1998 American Institute of Physics. S0003-6951 98 03939-4
III­V nitride heterostructure field-effect transistors

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

Collections: Engineering