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24 February1995 ChemicalPhysicsLetters233 (1995)555-558
 

Summary: ELSEVIER
24 February1995
ChemicalPhysicsLetters233 (1995)555-558
CHEMICAL
PHYSICS
LETTERS
Observation of the Xe-S charge transfer emission
in crystal Xe doped with 0CS
Satoshi Tanaka a, Hideo Kajihara a, Seiichiro Koda a, V.A. Apkarian b
aDepartmentof ChemicalSystemEngineering,Faculty ofEngineering, The Universityof Tokyo,Hongo 7-3-1,Bunkyo-ku,
Tokyo113,Japan
bDepartmentof Chemistry, Universityof California,Irvine, CA 92717, USA
Received25 October1994;in finalform22 November1994
Abstract
In free standing crystals of Xe, OCS readily dissociates upon irradiation at 248 nm. On continuation of the laser
irradiation, a broad emission centered at 346 nm was found to grow, which is assigned to the Xe-S charge transfer exciplex
transition in the crystal. The temperature-induced mobility of S atoms is documented: upon warm-up, the intensity of the
exciplex emission decreases with concomitant increase of the S2(B ~ X) emission band intensity.
1. Introduction
In contrast with the rare gas oxides, the rare gas

  

Source: Apkarian, V. Ara - Department of Chemistry, University of California, Irvine

 

Collections: Chemistry