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Summary: Modeling The Current-Voltage (I-V) Characteristics of
The MOSFET Device With Quantum Mechanical
Effects Due to Thin Oxide near 2/ SiOSi Interface Using
Asymptotic Methods
By
Henok Abebe
A Dissertation submitted to the School of Mathematical Sciences at
Claremont Graduate University and Electrical Engineering Department of
California State University Long Beach in partial fulfillment of the
requirements for the joint degree of Doctor of Philosophy in Engineering
and Industrial Applied Mathematics
Claremont, California
May 2002
Approved by:
_______________________
Professor Ellis Cumberbatch
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© Copyright by Henok Abebe 2002
All rights Reserved
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