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Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs By Pulsed Laser Deposition

Summary: Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs
By Pulsed Laser Deposition
James W. McCamy and Michael J. Aziz
Division of Engineering and Applied Sciences
Harvard University, Cambridge, MA 02138
Film growth consists of two basic processes, deposition and surface relaxation, with opposing
effects on the evolution of surface roughness. The pulsed-laser deposition (PLD) growth process
has the unique feature of having periods of very high deposition rates on Ás time scales followed
by periods, on the order of seconds, with only surface relaxation. In this paper we report the first
efforts towards exploiting this unique feature to study these two basic processes independently.
Thin epitaxial films of ZnSe were grown using PLD on (001) GaAs and 2░ miscut (001) GaAs
substrates. For growth on both the singular and vicinal surfaces, RHEED patterns taken following
growth showed clear, streaky first zone and sharp second zone spots, and well-defined Kikuchi
lines; these features are indicative of a smooth growth surface and high quality film. No
reconstruction of the growth surface was observed, in contrast to behavior observed in molecular
beam epitaxy. Time-resolved RHEED measurements show that a single morphology developed
during growth on singular (001) GaAs. However, during growth on miscut (001) GaAs, two
morphologies developed, one transitory and one appearing to evolve towards steady state. When
growth on the miscut substrate was stopped, recovery of the RHEED signal was observed. The


Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University


Collections: Physics; Materials Science