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INFLUENCE OF SILICON ON QUALITY FACTOR, MOTIONAL IMPEDANCE AND TUNING RANGE OF PZT-TRANSDUCED RESONATORS
 

Summary: INFLUENCE OF SILICON ON QUALITY FACTOR, MOTIONAL IMPEDANCE AND
TUNING RANGE OF PZT-TRANSDUCED RESONATORS
Hengky Chandrahalim1
, Sunil A. Bhave1
, Ronald Polcawich2
, Jeff Pulskamp2
,
Daniel Judy2
, Roger Kaul2
and Madan Dubey2
1
OxideMEMS Laboratory, Cornell University, Ithaca, NY 14853, USA
2
US Army Research Laboratory, Adelphi, MD 20783, USA
ABSTRACT
This paper provides a quantitative comparison and explores the
design space of PZT-only (Lead Zirconium Titanate) and PZT-on-
Silicon length-extensional mode resonators for incorporation into
RF MEMS filters and oscillators. We experimentally measured the
correlation of motional impedance (RX) and quality factor (Q) with

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering