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Molecular beam epitaxy of phase pure cubic InN J. Schrmann,a

Summary: Molecular beam epitaxy of phase pure cubic InN
J. Schörmann,a
D. J. As, and K. Lischka
Department Physik, Universität Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany
P. Schley and R. Goldhahn
Institut für Physik, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany
S. F. Li, W. Löffler, M. Hetterich, and H. Kalt
Institut für Angewandte Physik, Universität Karlsruhe, 76128 Karlsruhe, Germany
Received 28 September 2006; accepted 22 November 2006; published online 26 December 2006
Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC 001
substrates at growth temperatures from 419 to 490 °C. X-ray diffraction investigations show that
the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the
111 facets of the cubic layer. The full width at half maximum of the c-InN 002 x-ray rocking
curve is less than 50 arc min. The lattice constant is 5.01±0.01 Å. Low temperature
photoluminescence measurements yield a c-InN band gap of 0.61 eV. At room temperature the band
gap is about 0.56 eV and the free electron concentration is about n 1.7 1019
. © 2006
American Institute of Physics. DOI: 10.1063/1.2422913
Recently, great interest in nonpolar III-nitrides--


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics