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EFFECT OF NON-HYDROSTATIC STRESS ON KINETICS AND INTERFACIAL ROUGHNESS DURING SOLID PHASE EPITAXIAL GROWTH IN SI
 

Summary: EFFECT OF NON-HYDROSTATIC STRESS ON KINETICS AND INTERFACIAL
ROUGHNESS DURING SOLID PHASE EPITAXIAL GROWTH IN SI
William Barvosa-Carter and Michael J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
ABSTRACT
We report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on
solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the
amorphous-crystal interface. The growth rate is reduced by the application of uniaxial
compression, in agreement with previous results. Additionally, the velocity continues to decrease
with time. This is consistent with interfacial roughening during growth under stress, and is
supported by both reflectivity measurements and cross-sectional TEM observations. We present a
new kinetically-driven interfacial roughening mechanism which is consistent with our
observations.
INTRODUCTION
There is increasing interest in the effects of non-hydrostatic stresses on condensed phase
processes such as diffusion and crystal growth. The focus of most work has mainly been to
understand and account for the effects of stress on the energetics, or driving forces, for these
processes. Little has been done to account for stress effects on the mobilities of the interfaces or
atomic species involved, largely due to the difficulties associated with separating mobilities from
driving forces for a given kinetic process. This is particularly true for recent studies of the

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science