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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 5, MAY 1998 1047 Advanced Thin-Film Silicon-on-Sapphire
 

Summary: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 5, MAY 1998 1047
Advanced Thin-Film Silicon-on-Sapphire
Technology: Microwave Circuit Applications
Robb A. Johnson, Member, IEEE, Paul R. de la Houssaye, Member, IEEE, Charles E. Chang, Member, IEEE,
Pin-Fan Chen, Student Member, IEEE, Michael E. Wood, Graham A. Garcia, Member, IEEE,
Isaac Lagnado, Life Member, IEEE, and Peter M. Asbeck, Member, IEEE
Abstract--This paper reviews the prospects of thin-film silicon-
on-sapphire (TFSOS) CMOS technology in microwave appli-
cations in the 15 GHz regime and beyond and presents the
first demonstration of microwave integrated circuits based on
this technology. MOSFET's optimized for microwave use, with
0.5-m optically defined gate lengths and a T-gate structure,
have fffttt values of 25 GHz (14 GHz) and fffmax values of 66 GHz
(41 GHz) for n-channel (p-channel) devices and have noise figure
values below 1 dB at 2 GHz, some of the best reported per-
formance characteristics of any silicon-based MOSFET's to date.
On-chip spiral inductors exhibit quality factors above ten. Circuit
performance compares favorably with that of other CMOS-based
technologies and approach performance levels similar to those
obtained by silicon bipolar technologies. The results demonstrate

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering