Summary: Growth of cubic GaN quantum dots
T. Schuppa
, T. Meischb
, B. Neuschlb
, M. Fenebergb
, K. Thonkeb
, K. Lischkaa
, and
D.J. Asa
a
Universität Paderborn, Department Physik, Warburger Str.100, 33095 Paderborn, Germany
b
Institut für Quantenmaterie, Universität Ulm, 89069 Ulm, Germany
Abstract. Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam
epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum
dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid process. The density of the quantum dots was
controllable in a range of 108
cm-2
to 1012
cm-2

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics