Summary: Cubic AlGaN/GaN Hetero-field effect transitors with normally on and normally off
operation
D.J. As1
, E. Tschumak1
, F. Niebelschütz2
, W. Jatal2
, J. Pezoldt2
, R. Granzner3
, F. Schwierz3
, and
K. Lischka1
1)
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
2)
FG Nanotechnologie, Institut für Mikro- und Nanotechnologien, TU Ilmenau, Postfach
100565, 98684 Ilmenau, Germany
3)
FG Festkörperelektronik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany
ABSTRACT
Non-polar cubic AlGaN/GaN HFETs were grown by plasma assisted MBE on 3C-SiC

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics