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Journal of Crystal Growth 310 (2008) 29872994 Reaction kinetics of CuGaSe2 formation from
 

Summary: Journal of Crystal Growth 310 (2008) 29872994
Reaction kinetics of CuGaSe2 formation from
a GaSe/CuSe bilayer precursor film
W.K. Kima
, E.A. Payzantb
, S. Kima
, S.A. Speakmanb
, O.D. Crisallea
, T.J. Andersona,
a
Department of Chemical Engineering, University of Florida, 300 Weil Hall, P.O. Box 116550, Gainesville, FL 32611, USA
b
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Received 14 June 2007; received in revised form 3 December 2007; accepted 15 January 2008
Communicated by M.S. Goorsky
Available online 30 January 2008
Abstract
The reaction pathway and kinetics of CuGaSe2 formation were investigated by monitoring the phase evolution of temperature ramp
annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction.
Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science