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Impurity-induced diffusion bias in epitaxial growth Luis A. Nunes Amaral1,

Summary: Impurity-induced diffusion bias in epitaxial growth
LuiŽs A. Nunes Amaral1,
* and Joachim Krug2
Theorie II, Institut fušr Festkošrperforschung, Forschungszentrum Jušlich, D-52425 Jušlich, Germany
Fachbereich Physik, Universitašt-GH Essen, D-45117 Essen, Germany
Received 10 September 1996
We introduce two models for the action of impurities in epitaxial growth. In the first, the interaction between
the diffusing adatoms and the impurities is ``barrierlike'' and, in the second, it is ``traplike.'' For the barrier
model, we find a symmetry-breaking effect that leads to an overall downhill current. As expected, such a
current produces Edwards-Wilkinson scaling. For the trap model, no symmetry breaking occurs and the scaling
behavior appears to be of the conserved Kardar-Parisi-Zhang type. S1063-651X 97 03505-8
PACS number s : 81.10.Aj, 05.40. j, 68.35.Fx, 81.15.Hi
The effect of impurities on growth rate and morphology is
a classic topic of crystal growth theory 1 . The most thor-
oughly studied case is the step flow growth of a vicinal sur-
face, when the immobile impurities pin the advancing steps
and thus lead to step bunching 2,3 . These theories are me-
soscopic rather than microscopic in nature, in the sense that


Source: Amaral, Luis A.N. - Department of Chemical and Biological Engineering, Northwestern University


Collections: Physics; Biology and Medicine