| Sample search results for: a-plane gan films |
| 1 | Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate | ||
|
Summary: of the difficulty in obtaining high quality nonpolar or semipolar GaN epitax- ial films. It is well known that a-plane... temperature LT GaN, HT AlGaN, and HT GaN have been used to reduce extended defects in a-plane GaN ... |
|||
|
Source: Kim, Tae-Geun - School of Electrical Engineering, Korea University |
|||
|
Collection: Materials Science ; Engineering |
|||
| 2 | Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire | ||
|
Summary: Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire Sandip... ; published online 20 July 2005 We have investigated a 112¯0 -oriented A-plane GaN film on R-plane sapphire... gap of a strained A-plane ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 3 | Structural characterization of non-polar (112 0) and semi-polar (112 6) GaN films grown on r-plane sapphire | ||
|
Summary: Structural characterization of non-polar (112 0) and semi-polar (112 6) GaN films grown on r... s t r a c t Thick GaN films, with (112 0) or (112 6) planes parallel to the r-plane of sapphire, were... -polar GaN (a-GaN) films. {112 0} and {1010} prismatic-plane and ... |
|||
|
Source: Boston University, Center for Nanoscience and Nanobiotechnology |
|||
|
Collection: Materials Science |
|||
| 4 | Nonpolar a-plane p-type GaN and p-n Junction Diodes Arpan Chakraborty, H. Xing, M. D. Craven,a) | ||
|
Summary: ¯0 a-plane GaN films, grown on 11¯02 r-plane sapphire substrates via metalorganic chemical vapor... , on the growth parameters for both a-plane and c-plane GaN films was studied. The effect of Mg doping... and c-plane p-type GaN. FIG. 6. 5 m 5 m ... |
|||
|
Source: Xing, Grace Huili - Department of Electrical Engineering, University of Notre Dame |
|||
|
Collection: Materials Science ; Engineering |
|||
| 5 | Materials Science and Engineering B 127 (2006) 9197 Short communication | ||
|
Summary: C. The disadvantages of Si as a substrate for GaN hetero-epitaxy are the following: the a-plane +20.5% misfit led... reactions with the adjoining GaN film. Electron microscopy revealed that an ultra-thin (less than 2 nm... layers are used to absorb the lattice mismatch between the GaN ... |
|||
|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
|||
|
Collection: Materials Science |
|||
| 6 | Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen | ||
|
Summary: Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department... of the TiO2. Transmission electron microscopy of 50 nm thick TiO2 films on GaN and AlGaN/GaN showed sharp... structure, tetragonal a=4.59 Å, c =2.96 Å has also been grown epitaxially on c-plane 0001 as ... |
|||
|
Source: York, Robert A. - Department of Electrical and Computer Engineering, University of California at Santa Barbara |
|||
|
Collection: Engineering |
|||
| 7 | Optical polarization properties of M-plane GaN films investigated by transmittance anisotropy spectroscopy | ||
|
Summary: , which for M- and A-plane GaN lies in the film plane. This anisotropic strain can dras- tically modify... -III nitride semiconductor films of nonpolar orien- tations, such as M-plane 11¯00 and A-plane 112¯0 films... -reflector-based polarization switches.12 M- and ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 8 | in Compound Semiconductors 1997. Proc. IEEE 24th Int. Symp. on Compound Semiconductors. Eds. M. Melloch, M.A. Reed, New York, NY, USA, IEEE, 1998. p. 239-44 of xxvii+666 pp. | ||
|
Summary: intensity. c) a-plane edge emission under high density excitation. Figure 2. Directional PL of GaN films... -plane Figure 1. Directional PL of 400 µµµµm bulk GaN. a) From the a-plane edge excited on the a-surface (right... . Intensities could be determined qualitatively finding the ... |
|||
|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 9 | Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular | ||
|
Summary: a silicon substrate or c-plane and a-plane sapphire substrates. Subsequent vapor-liquid-solid growth of GaN... was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via... in a continuous-flow reactor. While the growth of GaN thin ... |
|||
|
Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
|||
|
Collection: Chemistry ; Materials Science |
|||
| 10 | Hydride vapor phase epitaxial growth of a high quality GaM film using a ZnO buffer layer | ||
|
Summary: by HVPE has been greatly improved. The GaN films grown by this method show excellent crystalline... , the preparation of GaN single-crystal films is based on heteroepitaxial growth using basal plane [ (000 1) plane... GaN films using metalorganic va- por phase epitaxy ... |
|||
|
Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 11 | [an error occurred while processing this directive] site search | ||
|
Summary: of Non-Polar III-Nitride Films Over a-Plane SiC Substrates E2.9 Jiawei Li, Zheng Gong, Changqing Chen... of Nonpolar GaN(1100) Films and Heterostructures by Plasma-Assisted Molecular Be Epitaxy E2.1 Oliver Brandt... Density in GaN Films Grown on Sapphire Substrates ... |
|||
|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 12 | 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (a) 202, No. 12, R135R137 (2005) / DOI 10.1002/pssa.200521222 | ||
|
Summary: -dislocation-density GaN films Weili Liu1 , Alexander A. Balandin*, 1 , Changho Lee2 , and Hae-Yong Lee2 1 Nano... ]. The conventional growth methods such as metalorganic vapor phase epitaxy (MOVPE) growth of GaN films on sapphire... performance. A very recently developed technique for the growth of ... |
|||
|
Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
|||
|
Collection: Materials Science |
|||
| 13 | Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 | ||
|
Summary: , Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown... that the exposed SiC suface pores tend to extend into the GaN film as open tubes and to trap Ga droplets. The GaN... in the films. For PAMBE of ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 14 | IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 41 (2008) 122001 (4pp) doi:10.1088/0022-3727/41/12/122001 | ||
|
Summary: and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions... . The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu... , Tb) samples showed that the films have the hexagonal phase ... |
|||
|
Source: McKittrick, Joanna - Department of Mechanical and Aerospace Engineering, University of California at San Diego |
|||
|
Collection: Materials Science |
|||
| 15 | Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown | ||
|
Summary: of GaN prepared by the same technique. Besides, we also found that doping Mg into AlGaN films assisted... a periodically grooved (PG) substrate to grow low-dislocation-density GaN single crystal films [68]. Low... as previously observed in the lateral growth of GaN [9]. Details of the ... |
|||
|
Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 16 | Epitaxial growth of zinc blende and wurtzitic allied nitride thin films on (001) silicon | ||
|
Summary: 08801 (Received6 May 1991;acceptedfor publication 13 June 1991) Zinc blende and wurtzitic GaN films have... temperatures followed by a higher temperaturegrowth of the rest of the film. GaN films grown on a single... - emitting diodes.`$ GaN films ... |
|||
|
Source: Moustakas, Theodore - Department of Electrical and Computer Engineering, Boston University |
|||
|
Collection: Materials Science |
|||
| 17 | Growth of single crystalline GaN thin films on Si,,111... substrates by high vacuum metalorganic chemical vapor deposition using a single | ||
|
Summary: Growth of single crystalline GaN thin films on Si,,111... substrates by high vacuum metalorganic... ; published 20 August 2004 Hexagonal GaN thin films were grown on Si 111 substrates using single molecular... carbon content in the GaN films and lowering growth ... |
|||
|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 18 | 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Phys. Status Solidi B 246, No. 6, 11841187 (2009) / DOI 10.1002/pssb.200880798 | ||
|
Summary: -III-nitride ternary alloys grown on M-plane and A-plane oriented GaN and AlN substrates. From the calculated... the lattice constant values that, when grown pseudomorphically on M-plane (A-plane) GaN or AlN substrates... .36 µm, can be grown pseudomorphically on M-plane/A-plane ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 19 | Subscriber access provided by Georgia Tech Library The Journal of Physical Chemistry C is published by the American Chemical | ||
|
Summary: the a-plane alumina substrate was also observed. The diffraction peak of GaN buffer layer was completely... used for the growth is a GaN epitaxial film grown on single crystal alumina substrate. The substrate... ). Figure 2b is a typical cross-section TEM image of the ZnO film together ... |
|||
|
Source: Wang, Xudong - School of Materials Science and Engineering, Georgia Institute of Technology; Wang, Zhong L. - School of Materials Science and Engineering, Georgia Institute of Technology |
|||
|
Collection: Engineering ; Materials Science |
|||
| 20 | Very narrow-band ultraviolet photodetection based on strained M-plane Sandip Ghosha | ||
|
Summary: , which is based on GaN films of nonpolar orientation such as M-plane or A-plane films see inset in Fig. 1... of NBDC, one could also use A-plane GaN films grown on R-plane sapphire or A-plane SiC.15,16 However, only... on ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 21 | Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy | ||
|
Summary: Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force... films deposited on GaN has been studied using reflection high-energy electron diffraction RHEED , atomic... - faces under ultrahigh-vacuum UHV conditions for the epi- taxial growth of metal ... |
|||
|
Source: Yu, Edward T. - Department of Electrical and Computer Engineering, University of Texas at Austin |
|||
|
Collection: Engineering ; Physics ; Materials Science |
|||
| 22 | GALLIUM NITRATE NUCLEATION LAYERS AND THEIR ROLE IN THE GROWTH AND PROPERTIES OF GaN GALLIUM NITRATE NUCLEATION LAYERS AND THEIR ROLE IN THE GROWTH AND | ||
|
Summary: GALLIUM NITRATE NUCLEATION LAYERS AND THEIR ROLE IN THE GROWTH AND PROPERTIES OF GaN GALLIUM... NITRATE NUCLEATION LAYERS AND THEIR ROLE IN THE GROWTH AND PROPERTIES OF GaN Luma Fohtung Nitrate... studied. I focus on the effect the nucleation layers of GaN have on its properties. The nucleation layer |
|||
|
Source: Wysin, Gary - Department of Physics, Kansas State University |
|||
|
Collection: Physics |
|||
| 23 | Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique | ||
|
Summary: nitride GaN thin films with a wurtzite structure were grown on fused silica FS substrates by pulsed laser... a single c-axis orientation for the GaN film grown with a thin 1000 Å zinc oxide ZnO film as an alignment... been made in GaN thin film ... |
|||
|
Source: Kwok, Hoi S. - Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology |
|||
|
Collection: Engineering ; Materials Science |
|||
| 24 | New Faces of GaN: Growth, Doping and Devices | ||
|
Summary: : Circular Mask Openings · Stable GaN facets under `a-plane' MOCVD growth conditions Scale bar = 3 m #12;LEDs... : heterostructures A-plane and M-plane growth Common Microstructure Defect reduction Doping Devices Semi-polar GaN... Scale bar = 5 µm (window width) CL = 365 nm SEM [0001][1100] ... |
|||
|
Source: California at Santa Barbara, University of - Department of Computer Science, Four Eyes Lab. |
|||
|
Collection: Computer Technologies and Information Sciences |
|||
| 25 | Combined MOCVD and MBE growth of GaN on porous SiC Ashutosh Sagar (a), R. M. Feenstra (a), C. K. Inoki (b), T. S. Kuan (b), D. D. Koleske (c) | ||
|
Summary: Processing Science Dept., Sandia National Lab., Albuquerque, NM 87185 ABSTRACT GaN films have been grown... improved GaN film quality on porous SiC [2-4]. It was recently shown that the GaN grown by molecular beam... ]. It was found for porous substrates that the MBE ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 26 | Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1xO (0 x 0.3) Films | ||
|
Summary: O orientations in devices. Earlier, Gorla et al. reported the growth of a-plane ZnO films on r-sapphire substrate... properties.6 Muthukumar et al. grew a-plane MgxZn1)xO films with Mg compositions up to 33%; it was found... the wurzite crystal structure.7 Another advantage of the a-plane ... |
|||
|
Source: Diebold, Ulrike - Department of Physics, Tulane University |
|||
|
Collection: Materials Science ; Physics |
|||
| 27 | Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation | ||
|
Summary: -free M-plane nitride films have finally been grown on bulklike M-plane and A-plane GaN substrates... in the UV range can instead be achieved with InxAl1-xN films. These results also hold for alloy films on A-plane... . The symmetry of the Bir-Pikus Hamil- tonian is ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 28 | Growth of GaN Thin Films on Silicon Using Single Source Precursors | ||
|
Summary: Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New... We have grown the GaN thin films on silicon substrates using the newly developed single source... precursors by thermal MOCVD method. Highly oriented GaN thin films in the ... |
|||
|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 29 | phys. stat. sol. (a) 176, 711 (1999) Subject classification: 68.55.Jk; 68.55.Nq; S7.14 | ||
|
Summary: N and GaN Thin Films on Si(100) Using New Single Molecular Precursors by MOCVD Method J.-H. Boo1 ) (a), S... GaN(0002) thin films were successfully grown from DMGA without carrier gas. In the case of AlN film... using the precursors of DEAA and DETBAA. The XP spectra of all deposited AlN ... |
|||
|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University; Park, Joon Taik - Department of Chemistry, Korea Advanced Institute of Science and Technology |
|||
|
Collection: Chemistry ; Materials Science |
|||
| 30 | Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang, Yong Ding, Zhong Lin Wang , Robert L. Snyder | ||
|
Summary: Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang... Interface structure GaN films were deposited on Si (400) wafers by a pulsed laser deposition technique... , thereby achieving polar or nonpolar film surfaces as desired. The ... |
|||
|
Source: Wang, Zhong L. - School of Materials Science and Engineering, Georgia Institute of Technology |
|||
|
Collection: Materials Science |
|||
| 31 | Z .Applied Surface Science 154155 2000 439443 www.elsevier.nlrlocaterapsusc | ||
|
Summary: temperature on the structure of the AlN and GaN films are systematically investigated. It is shown... conditions. The vast majority of research on AlN and GaN thin film has been focused on the hexagonal... . In the case of AlN, the target was a cold pressed and sintered pellet of AlN. In the case of ... |
|||
|
Source: Kwok, Hoi S. - Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology |
|||
|
Collection: Engineering ; Materials Science |
|||
| 32 | GaN and InN conduction-band states studied by ellipsometry Munise Rakel,* Christoph Cobet, and Norbert Esser | ||
|
Summary: the binding energy of the Ga 3d electrons in GaN. By measuring M-plane GaN 11¯00 and a-plane InN 112... roughness is 3 nm. A thermal mismatch of the GaN 11¯00 film and the -LiAlO3 substrate leads to a compressive... and ordinary DFs and , respectively. The cubic ... |
|||
|
Source: Schmidt, Wolf Gero - Department Physik, Universität Paderborn |
|||
|
Collection: Materials Science |
|||
| 33 | Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA | ||
|
Summary: Hill, NJ 07974 USA (Submitted June 21, 2001) Subject classification: 68.55.Jk; S7.14 GaN films... dislocations are achieved in GaN films of 1 mm thickness grown under optimal conditions. Reverse leakage... . Most GaN epitaxial films used for devices have been ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 34 | LiNbO3 thin film growth on (0001)-GaN Peter J. Hansen | ||
|
Summary: LiNbO3 thin film growth on (0001)-GaN Peter J. Hansen Materials Department, University... on (0001)-GaN templates and AlGaN/GaN structures. The films were characterized by four-circle x... TEM that there was a transition layer between LiNbO3 and GaN. The films were ... |
|||
|
Source: York, Robert A. - Department of Electrical and Computer Engineering, University of California at Santa Barbara |
|||
|
Collection: Engineering |
|||
| 35 | Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2 | ||
|
Summary: . The GaN ther- mal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were... affects the thermal behavior of GaN during growth and annealing of MOCVD and HVPE films. 1. Introduction... of SEM pictures in Figs. 12 ) a to c the surface of GaN is still intact ... |
|||
|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
|||
|
Collection: Materials Science |
|||
| 36 | GaN Nanowire Arrays for High-Output Nanogenerators Chi-Te Huang,, | ||
|
Summary: -liquid-solid process. For substrate preparation, 2-µm-thick wurtzite structured (0001) GaN film was grown epitaxially... film served as the catalyst for the growth of GaN NW arrays. GaN NW arrays were synthesized via thermal... and a (0001) plane of Al2O3 reveal the epitaxial ... |
|||
|
Source: Wang, Zhong L. - School of Materials Science and Engineering, Georgia Institute of Technology |
|||
|
Collection: Materials Science |
|||
| 37 | HETEROEPITAXY AND CHARACTERIZATION OF LOW-DISLOCATION-DENSITY T. Detchprohm1 | ||
|
Summary: a low-dislocation-density GaN film[8-10]. Since GaN single seeds as well as a selective-growth mask... GaN film was grown on a PG-SiC or Si substrate. Then a GaN layer was subsequently grown at 1100o C... of all GaN films grown on PG-substrates ... |
|||
|
Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 38 | Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates | ||
|
Summary: for light emitting10 and field emission.11 For the growth of aligned ZnO nanowires/nanorods, a-plane... as the substrate for the subsequent growth of ZnO nanorods. Undoped c-plane- oriented GaN and AlN thin films were... grown on one-side-polished a-plane sapphire substrates to thicknesses of 2 µm and 500 ... |
|||
|
Source: Wang, Xudong - School of Materials Science and Engineering, Georgia Institute of Technology |
|||
|
Collection: Engineering |
|||
| 39 | Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity | ||
|
Summary: was performed by plasma-assisted molecular beam epitaxy (PAMBE). The GaN films were characterized by x... show that the GaN film grown on porous substrates contains open tubes and a low dislocation density... in the GaN film. However, we do not find any overall ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 40 | Submitted to J. Vac. Sci. Technol., December 11, 1998 1 Growth of Hf and HfN on GaN by Molecular Beam Epitaxy | ||
|
Summary: -type GaN(000¯1) by MBE using a custom built Hf electron beam source and an ammonia leak. The films were... ). It was found that epitaxial growth of Hf is possible even at room temperature. GaN films varying in thickness... N interlayer between the GaN and Hf layers. When the ... |
|||
|
Source: Cohen, Philip I. - Department of Electrical and Computer Engineering, University of Minnesota |
|||
|
Collection: Computer Technologies and Information Sciences |
|||
| 41 | Growth of GaN on porous SiC by molecular beam epitaxy | ||
|
Summary: growth of high quality GaN thin films is the unavailability suitable substrates. The lack of suitable... of the epitaxial film (maximum thickness of the GaN film before dislocations form to relieve strain) can... density in GaN epitaxial films is ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 42 | Journal of Crystal Growth 274 (2005) 3846 Influence of polarity on GaN thermal stability | ||
|
Summary: November 2004 Abstract A comparative study of the stability of Ga- and N-polar GaN films was made... reported a comparative thermal stability study of MOVPE versus HVPE GaN films [11]. The observed difference... composition. 3.1. Annealing in H2 3.1.1. Anneal of Ga-polar GaN For Ga-polar ... |
|||
|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
|||
|
Collection: Materials Science |
|||
| 43 | Journal of Crystal Growth 189/190 (1998) 439--444 MOCVD of BN and GaN thin films on silicon | ||
|
Summary: Journal of Crystal Growth 189/190 (1998) 439--444 MOCVD of BN and GaN thin films on silicon: new... a remote microwave plasma. Hexagonal GaN films were also grown on Si(1 0 0) with h-BN buffer layers... the single source precursor of borane-triethylamine complex and new attempts of GaN ... |
|||
|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 44 | Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition | ||
|
Summary: Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition M... from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic... with V/III ratio over the range from 30 to 1000. The Eu incorporation in ... |
|||
|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
|||
|
Collection: Engineering ; Materials Science |
|||
| 45 | A study of GaN etch mechanisms using inductively coupled Cl2/Ar Hyeon-Soo Kima,*, Geun-Young Yeoma | ||
|
Summary: of more than 20% Ar decreased GaN etch rates, however, the H.S. Kim et al. / Thin Solid Films 341 (1999... A study of GaN etch mechanisms using inductively coupled Cl2/Ar plasmas Hyeon-Soo Kima,*, Geun... -600, South Korea Accepted 6 November 1998 Abstract GaN etching was performed using planar inductively ... |
|||
|
Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 46 | phys. stat. sol. (c) z, No. z, zzz zzz (2004) / DOI 10.1002/pssc.200400000 1 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | ||
|
Summary: in the GaN films [1]. One recent approach to reduce this dislocation density has been lateral epitaxial... the pores in the SiNX film, resulting in the formation of GaN islands during the initial stages of growth... and Discussion Figure 1(a) shows a plan view SEM image of a GaN ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 47 | Pour obtenir le grade de DOCTEUR DE L'UNIVERSITE DE GRENOBLE | ||
|
Summary: _____________________________________________ 71 2.3.1. Standard process to grow GaN films on sapphire_______________________ 71 tel-00524190... ,version2-11Oct2010 #12;- 7 - 2.3.2. Doping of 2D GaN films _________________________________________ 75 2... quelques résultats importants : · Le dépôt de ... |
|||
|
Source: Ecole Polytechnique, Centre de mathématiques |
|||
|
Collection: Mathematics |
|||
| 48 | 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) Monterey, California, USA, September 510, 2004 | ||
|
Summary: .5-µm-thick GaN film. These tracks, 100 °A in diameter, exhibit a large degree of structural... planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder... , California, USA, September 510, 2004 Lattice disorder produced in GaN by ... |
|||
|
Source: Timmers, Heiko - School of Physical, Environmental and Mathematical Sciences, Australian Defence Force Academy, University of New South Wales |
|||
|
Collection: Physics ; Materials Science |
|||
| 49 | Resonant Raman scattering of coherent picosecond pulses by one and two longitudinal-optical phonons in GaN film grown on silicon (111) substrate | ||
|
Summary: in GaN film grown on silicon (111) substrate Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding... as two longitudinal-optical phonons in GaN film grown on Si (111) substrate. © 2008 Optical Society... scattering was carefully investigated on GaN films ... |
|||
|
Source: Gilchrist, James F. - Department of Chemical Engineering, Lehigh University |
|||
|
Collection: Materials Science |
|||
| 50 | Polarized photoluminescence and absorption in A-plane InN films Jayeeta Bhattacharyya, Sandip Ghosh,a | ||
|
Summary: Polarized photoluminescence and absorption in A-plane InN films Jayeeta Bhattacharyya, Sandip Ghosh... wurtzite InN films grown on R-plane 11¯02 sapphire substrates using molecular beam epitaxy. For A-plane... to determine the anisotropy in the dielectric function of InN using 112¯0 oriented ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 51 | Fabrication of GaN nanowire arrays by confined epitaxy Xinyu Sun, Michael Fairchild, and Stephen D. Hersee | ||
|
Summary: deposition on a 600 nm thick, pla- nar MOCVD GaN film that had been grown on a 6H-SiC substrate... and planar GaN films. The spectral intensity for the planar GaN films has been magnified 50 to allow... for a 600 nm planar GaN ... |
|||
|
Source: New Mexico, University of - Center for High Technology Materials |
|||
|
Collection: Materials Science |
|||
| 52 | Effect of Si and Er Co-doping on Green Electroluminescence from GaN:Er ELDs Rui Wang, and Andrew J Steckl | ||
|
Summary: -0030 ABSTRACT (Er, Si) co-doped GaN thin films were grown on Si substrates by molecular beam epitaxy (MBE... . The electrical properties of (Si, Er) co-doped GaN thin films are believed to be responsible for the current... as substrates for GaN thin film growth ... |
|||
|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
|||
|
Collection: Engineering ; Materials Science |
|||
| 53 | Insulating substrates for cubic GaN-based HFETs E. Tschumak , M.P.F. de Godoy, D.J. As, K. Lischka | ||
|
Summary: a non-polar a-plane AlGaN/GaN HFET with nearly normally off operation in which the threshold voltage... hundred nanometer thick cubic GaN (c-GaN) film was grown on this substrate [10] without intentionally... f o Available online 24 September 2008 Keywords: GaN 3C-SiC a b s t r a c t The growth of cubic |
|||
|
Source: As, Donat Josef - Department Physik, Universität Paderborn |
|||
|
Collection: Materials Science ; Physics |
|||
| 54 | GaN1-xBix: Extremely mismatched semiconductor alloys A. X. Levander,1,2 | ||
|
Summary: are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction... that GaN1-xBix alloys with up to x 0.11 can be grown by LT-MBE. The GaN1-xBix films in this study were... provided the active nitrogen. For the growth of GaN1-xBix ... |
|||
|
Source: Wu, Junqiao - Department of Materials Science and Engineering, University of California at Berkeley |
|||
|
Collection: Renewable Energy ; Materials Science |
|||
| 55 | 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics | ||
|
Summary: .200778490 GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE A. Ougazzaden*, 1 , T. Moudakir2 , T... , respectively. #12;1566 A. Ougazzaden et al.: GaN thin films on z- and x-cut LiNbO3 substrates © 2008 WILEY... of GaN, we have confirmed that the primary orientation of both ... |
|||
|
Source: Sirenko, Andrei - Department of Physics, New Jersey Institute of Technology |
|||
|
Collection: Physics ; Materials Science |
|||
| 56 | Room-temperature-grown rare-earth-doped GaN luminescent thin films D. S. Lee and A. J. Steckla) | ||
|
Summary: Room-temperature-grown rare-earth-doped GaN luminescent thin films D. S. Lee and A. J. Steckla... wavelengths. GaN thin films are usually grown at relatively high temperature, such as 10001100 °C... of RE-doped GaN and resulting amorphous or polycrystalline films ... |
|||
|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
|||
|
Collection: Engineering ; Materials Science |
|||
| 57 | Journal of Crystal Growth 300 (2007) 3741 Formation of large-area freestanding gallium nitride substrates by | ||
|
Summary: . A number of GaN thick films were grown onto sapphire substrates by the hydride vapor-phase epitaxy (HVPE... the thermal stresses in the GaN film and substrate as a function of film thickness using Stoney's equation... and a separation step to free the bulk GaN from ... |
|||
|
Source: Boston University, Center for Nanoscience and Nanobiotechnology |
|||
|
Collection: Materials Science |
|||
| 58 | Growth and structural characterization of ferromagnetic | ||
|
Summary: of room temperature ferromagnetism [9]. Cr- doped GaN bulk and thin film have recently been studied [10... reprint #12;Growth and structural characterization of ferromagnetic Cr-doped GaN nanowires Jung... magnetic semiconductors, ferromagnetism, GaN, nanowires * Corresponding author: e-mail kimd |
|||
|
Source: Kim, Jae-Hoon - Department of Physics, Pohang University of Science and Technology |
|||
|
Collection: Physics |
|||
| 59 | Optical and Structural Analysis of GaN Grown by Remote Plasma Enhanced Laser Induced | ||
|
Summary: .40.Fy; 81.15.Gh High quality polycrystalline gallium nitride (GaN) films have been grown by remote... growth of GaN on these substrates using RPE-LICVD. Experimental GaN films were grown by RPE-LICVD on c... versus hw for the GaN film is shown in ... |
|||
|
Source: Timmers, Heiko - School of Physical, Environmental and Mathematical Sciences, Australian Defence Force Academy, University of New South Wales |
|||
|
Collection: Physics ; Materials Science |
|||
| 60 | The IEE -Properties, processing and applications of gallium nitride and related semicondu.. Page 1 of 6 http://www.iee.org/Publish/Books/EMIS/em023c.cfm 07/22/03 | ||
|
Summary: characterisation of planar defects in GaN films on sapphire L.T. Romano ! A7.7 - HRTEM characterisation of GaN... films on GaAs N. Kuwano ! A7.8 - HRTEM characterisation of GaN and related compounds on SiC A.D. Hanser... Prop A1 S and A2 A Elect Prop A3 G Elect Prop A4 In Elect Prop A5 A ... |
|||
|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 61 | Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates | ||
|
Summary: Er-doped -GaN thin films grown on Si 111 . The GaN was grown by molecular beam epitaxy using solid... and the possibility of integra- tion with Si technology. Er-doped GaN films were grown in a Riber MBE-32 system on 2... as measured by secondary ion mass spec- trometry. The resulting ... |
|||
|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
|||
|
Collection: Engineering ; Materials Science |
|||
| 62 | Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh Sagar, R. M. Feenstra | ||
|
Summary: 1 Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh... , College Park, MD 20742-2115 GaN films are grown by plasma-assisted molecular beam epitaxy on Si... , high power electronic applications. Most GaN epitaxial films used for ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 63 | Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy | ||
|
Summary: assessed. For study of the lattice-mismatch dependence, growth of InN films on GaN, AlN and directly... , and 2 c from about 400 to 700 arcsec. Among those three kinds of samples, InN films grown on GaN showed... . In fact, InN film with a thickness of 2400 Å grown on ... |
|||
|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 64 | Buffer layer strain transfer in AlN/GaN near critical thickness Chinkyo Kima) | ||
|
Summary: the quality of the GaN film. Some years ago there were reports that introduc- tion of AlN buffer layer, which... that this description is only valid up to a certain thickness in h2 GaN for which the lattice mismatch between two films... GaN reaches the thickness where misfit disloca- ... |
|||
|
Source: Robinson, Ian - Department of Physics, University of Illinois at Urbana-Champaign |
|||
|
Collection: Physics |
|||
| 65 | Refractive indices of ZnSiN2 on r-plane sapphire Department of Mathematics, University of California, Los Angeles, Los Angeles, California 90095 | ||
|
Summary: -nm-thick a-plane GaN buffer layer grown on r-plane sapphire. The film was visually transparent, had... , the film samples under study contained a thin, 40 nm a-plane GaN buffer. For accurate determination... .2 larger.10 Thus, good optical confinement within ... |
|||
|
Source: Avrutsky, Ivan - Department of Electrical and Computer Engineering, Wayne State University |
|||
|
Collection: Engineering |
|||
| 66 | Materials Science in Semiconductor Processing 9 (2006) 375379 Diffusion behavior of implanted Li ions in GaN thin films | ||
|
Summary: ions in GaN thin films studied by secondary ion mass spectrometry F. Salmana , L. Chowa,Ã, B. Chaib , F... film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film... profiles show relatively little movement of Li in the ... |
|||
|
Source: Chow, Lee - Department of Physics, University of Central Florida |
|||
|
Collection: Physics ; Materials Science |
|||
| 67 | Journal of Crystal Growth 189/190 (1998) 183--188 Growth of hexagonal GaN thin films on Si(1 1 1) with cubic SiC | ||
|
Summary: Journal of Crystal Growth 189/190 (1998) 183--188 Growth of hexagonal GaN thin films on Si(1 1 1... , USA Abstract The growth of GaN films on silicon or sapphire substrates has not been straightforward... crystals might solve this problem and will be one of a suitable buffer layers for the cubic ... |
|||
|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 68 | Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy | ||
|
Summary: 109 cm-2 . For a-plane LEO GaN films grown using 11¯01 -oriented stripes, dislocations typically... structure in nonpolar n-type GaN grown in the a-plane orientation using lateral epitaxial overgrowth LEO... properties, specifically local, nanos- cale charge distributions, in n-type ... |
|||
|
Source: Yu, Edward T. - Department of Electrical and Computer Engineering, University of Texas at Austin |
|||
|
Collection: Engineering ; Physics ; Materials Science |
|||
| 69 | Universit Joseph Fourier Grenoble I Sciences & Gographie | ||
|
Summary: from liquid helium to room temperature for REs in GaN films [Nye03, And05]. One way to overcome... RE-doped GaN thin films is rather scarce [Lee04]. Moreover, the energy transfer mechanism in rare... (Figure 3.1). GaN films grown in N-rich growth conditions show ... |
|||
|
Source: Ecole Polytechnique, Centre de mathématiques |
|||
|
Collection: Mathematics |
|||
| 70 | Properties of GaN grown at high rates on sapphire and on 6HSiC S. Fischer,a) | ||
|
Summary: , California 94720 Received 22 April 1996; accepted for publication 20 August 1996 Thick GaN films were... to deliver thick GaN films of high quality.5 Currently, bulk GaN crystals with dimensions of only a few... and characterization of thick GaN ... |
|||
|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 71 | Nucleation and Stoichiometry Dependence of rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy | ||
|
Summary: Nucleation and Stoichiometry Dependence of rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma... , using GaN films that are terminated with a Ga-bilayer or that have additional Ga on the surface (Ga... and above the terminate 2 monolayers (since our growth of the GaN ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 72 | Modeling of the Thermal Conductivity of Polycrystalline GaN Films D. Kotchetkov1 | ||
|
Summary: Modeling of the Thermal Conductivity of Polycrystalline GaN Films D. Kotchetkov1 and A. A. Balandin... of the thermal conductivity of polycrystalline GaN films. It is assumed that grain boundaries play a major role... for polycrystalline films and model predictions for crystalline ... |
|||
|
Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
|||
|
Collection: Materials Science |
|||
| 73 | Submitted to J. Appl. Phys. November 4, 1998; not for further distribution 1 Structure and Composition of GaN(0001) A and B Surfaces | ||
|
Summary: . Both reconstructions were much sharper than those seen on GaN films grown on sapphire. RHEED... the doping characteristics of GaN. Studying these differences on GaN films grown on sapphire present two main... energy elec- tron diffraction (RHEED) observations of unipolar ... |
|||
|
Source: Cohen, Philip I. - Department of Electrical and Computer Engineering, University of Minnesota |
|||
|
Collection: Computer Technologies and Information Sciences |
|||
| 74 | GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan | ||
|
Summary: strains [2-4]. In this work we grew GaN films on both porous SiC and GaN templates and evaluated... the GaN films on porous SiC, and both PAMBE and metalorganic chemical vapor deposition (MOCVD... , the etching was performed on GaN films purchased ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 75 | Morphology and surface reconstructions of GaN(1 1 00) surfaces C. D. Lee and R. M. Feenstra | ||
|
Summary: on the films. In this work we have used plasma assisted molecular beam epitaxy (PAMBE) to grow GaN films on Zn... , ZnO offers an attractive substrate for GaN heteroepitaxy. We obtain well oriented (1 1 00) GaN films... . Figure 1(a) shows a typical surface morphology ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 76 | Effect of neutral beam etching of p-GaN on the GaN device characteristics B. J. Park, K. S. Min, H. C. Lee, J. W. Bae, D. W. Kim, and G. Y. Yeoma | ||
|
Summary: Effect of neutral beam etching of p-GaN on the GaN device characteristics B. J. Park, K. S. Min, H... 2006; published 13 February 2007 GaN materials were etched using a CF4-based neutral beam, and its etch... . Photoluminescence data showed that the neutral beam etched GaN materials show fewer defects on the surface compared |
|||
|
Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 77 | INSTITUT POLYTECHNIQUE DE GRENOBLE attribue par la biblioth`eque | ||
|
Summary: Les semiconducteurs nitrures du groupe III (AlN, GaN, InN et leurs alliages) ont connu un d... ´eduire. Dans ce contexte, mon travail a port´e sur l'analyse des modes de croissance de l'AlN et du GaN orient... GaN, ainsi qu'`a la r´ealisation de zones actives `a puits et bo^ites quantiques. L'´etude des |
|||
|
Source: Ecole Polytechnique, Centre de mathématiques |
|||
|
Collection: Mathematics |
|||
| 78 | Watching GaN Nanowires Grow Eric A. Stach,*, Peter J. Pauzauskie, Tevye Kuykendall, | ||
|
Summary: nanowires without unintentional doping. The TEM samples studied in this work were pure GaN thin films grown... to a thickness of 12 µm via hydride vapor phase epitaxy (HVPE) on the c-plane of sapphire. The GaN film... . The initial decomposition of the GaN thin film ... |
|||
|
Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
|||
|
Collection: Chemistry ; Materials Science |
|||
| 79 | Deposition of CVD diamond onto GaN P.W. May a,*, H.Y. Tsai b | ||
|
Summary: performed to deposit continuous layers of CVD diamond onto epitaxial GaN films. Such diamond coatings would... )- oriented GaN films on an AlN/Al2O3 substrate using MW plasma CVD. They reported that to prevent etching... the second order of the GaN band), showing that the ... |
|||
|
Source: Bristol, University of - School of Chemistry, CVD Diamond Group |
|||
|
Collection: Chemistry ; Materials Science |
|||
| 80 | Recent Developments in Surface Studies of GaN and AlN R. M. Feenstra* | ||
|
Summary: . 1 have been observed for AlN films grown both on GaN buffer layers and grown directly on SiC,28 #12... 10) m-plane47,48,49 and the (11 20) a-plane,50 with one important motivation being that some... for a )0110( oriented GaN film, grown by PA-MBE on ZnO )0110( , are shown in Fig. 6.48 ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 81 | UNIVERSITE DE NICE-SOPHIA ANTIPOLIS Ecole doctorale Sciences Fondamentales et Appliques | ||
|
Summary: maille entre le GaN et le saphir conduisent à des films avec de très fortes densités de défauts... of semipolar GaN templates and epitaxial-lateral- overgrown films deposited on M-plane sapphire by metalorganic... - Ductile relaxation in cracked MOCVD-grown AlGaN films on ... |
|||
|
Source: Ecole Polytechnique, Centre de mathématiques |
|||
|
Collection: Mathematics |
|||
| 82 | Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy | ||
|
Summary: for edge dislocations and < 1 × 106 cm-2 for screw dislocations are achieved in GaN films of 0.8 µm... - sions in non-optimally prepared material. 2 Experimental GaN films of typically 0.8 µm thickness... expect from an estimated critical thickness of 23 nm that the strain in the ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 83 | Growth and Characterization of GaN Nanowires for Hydrogen JASON L. JOHNSON,1 | ||
|
Summary: the GaN nanowires by catalytic chemical vapor deposition (CVD) using gold thin films as a catalyst... band typically observed in bulk GaN thin films16 implies the high quality of the GaN nano- wires... and Characterization of GaN Nanowires for Hydrogen Sensors 491 ... |
|||
|
Source: Ural, Ant - Department of Electrical and Computer Engineering, University of Florida |
|||
|
Collection: Materials Science ; Engineering |
|||
| 84 | 596 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 4, APRIL 2005 Nanoscale Spatial Phase Modulation of GaN on | ||
|
Summary: of a 75-nm-thick GaN film deposited on the nanofaceted Si surface shown in Fig. 2. The black and a white... Fig. 3(a) shows a 45 tilted SEM image of a 75-nm-thick GaN film deposited on the nanofaceted Si... of a 600-nm-thick GaN film grown on a nanofaceted Si ... |
|||
|
Source: New Mexico, University of - Center for High Technology Materials |
|||
|
Collection: Materials Science |
|||
| 85 | Low gap amorphous GaN1-xAsx alloys grown on glass substrate K. M. Yu,1,a | ||
|
Summary: absorption coefficient of 105 cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films... over the range of 1903300 nm. Figure 1 shows the As mole fraction x in GaN1-xAsx films measured by RBS... as the growth temperature is reduced. We found that ... |
|||
|
Source: Wu, Junqiao - Department of Materials Science and Engineering, University of California at Berkeley |
|||
|
Collection: Renewable Energy ; Materials Science |
|||
| 86 | Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) | ||
|
Summary: 1 Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H... steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display... substantially reduced width for films on the vicinal substrates compared to ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 87 | ELSEVIER Journal of Crystal Growth 170 (1997) 325-328 j........ CRYSTAL | ||
|
Summary: employed as Si and Mg dopant precursors for MOVPE growth of n-type and p-type GaN films, respectively... rate. The temperature dependence of the Hall mobility showed good agreement with n-type GaN films grown... . Si-doped and Mg-doped GaN films were grown by MOVPE on ... |
|||
|
Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
|||
|
Collection: Materials Science ; Physics |
|||
| 88 | A study of GaN etching characteristics using HBr-based inductively coupled plasmas | ||
|
Summary: [7,8]. 2. Experiment In this study, an un-doped GaN film grown on (0 0 0 1) sapphire wafers was used... A study of GaN etching characteristics using HBr-based inductively coupled plasmas D.W. Kim a , C... -based(Cl2/HBr, BCl3/HBr, and HCl/HBr) inductively coupled plasmas were used to etch GaN selectively over |
|||
|
Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
|||
|
Collection: Materials Science |
|||
| 89 | Journal of Crystal Growth 240 (2002) 613 Calculated strain energy of hexagonal epitaxial thin films | ||
|
Summary: applications often require alloying that introduces additional stress in the film. As an example, alloying GaN... oriented film and substrate are pre- sented. These general relations are then applied to the growth of GaN... sets of calculations were performed to demonstrate the strain energy calculation of a ... |
|||
|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
|||
|
Collection: Materials Science |
|||
| 90 | Critical thickness of GaN thin films on sapphire (0001) Chinkyo Kima) | ||
|
Summary: Critical thickness of GaN thin films on sapphire (0001) Chinkyo Kima) and I. K. Robinson Department... with in- creasing film thickness of GaN. They explained it by a strain relaxation mechanism resulting from... the thinnest films, a synchrotron x-ray source was employed to measure ... |
|||
|
Source: Robinson, Ian - Department of Physics, University of Illinois at Urbana-Champaign |
|||
|
Collection: Physics |
|||
| 91 | Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy | ||
|
Summary: -insulating MOCVD GaN templates on A-plane sapphire substrates grown at the Naval Research Laboratory. Transmission... ; accepted for publication 16 July 2001 High-quality 0001 and 0001¯ -GaN films were grown by plasma... Controlled oxygen doping of GaN using plasma assisted molecular-beam ... |
|||
|
Source: Myers, Tom - Department of Physics, West Virginia University |
|||
|
Collection: Physics |
|||
| 92 | Lateral color integration on rare-earth-doped GaN electroluminescent D. S. Lee and A. J. Steckla) | ||
|
Summary: Lateral color integration on rare-earth-doped GaN electroluminescent thin films D. S. Lee and A. J... GaN thin films doped with Er and Eu. These rare-earth doped GaN GaN:RE films were grown on Si 111... of 30 V. The GaN:RE films were clear and ... |
|||
|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
|||
|
Collection: Engineering ; Materials Science |
|||
| 93 | Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2 | ||
|
Summary: nm thick GaN0.43As0.57 film before and after 850 °C 20 s RTA. The annealing process reduced... in Fig. 2 show the effect of RTA on the crystallinity of a GaN0.64As0.36 film. No crystalline peak can... GaN1-xAsx film resulted in larger GaAs 29 nm and smaller ... |
|||
|
Source: Wu, Junqiao - Department of Materials Science and Engineering, University of California at Berkeley |
|||
|
Collection: Renewable Energy ; Materials Science |
|||
| 94 | Temperature dependence of molecular beam epitaxy of GaN on SiC (0001) | ||
|
Summary: nitride (GaN) thin films have been grown on 6H-sil- icon carbide (0001) substrates at varying substrate... to be reasons for GaN films on SiC not being significantly better [2]. In this work, we have grown GaN on Si... (RHEED) pattern (indicative of a 3×3-R30 surface reconstruction) is ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 95 | Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy | ||
|
Summary: epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected... sapphire, but several factors other than mismatch are be- lieved to be reasons for GaN films on Si... - tained. GaN films of upto 600 nm thickness were grown by ... |
|||
|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
|||
|
Collection: Materials Science |
|||
| 96 | Sunday November 1 17:00 19:00 Registration | ||
|
Summary: of surface kinetics in the growth of a-plane GaN on r-plane sapphire by molecular beam epitaxy G... 2 8:00 8:45 Registration 8:45 9:00 Welcome and Conference Opening 9:00 10:15 Session 1 - GaN... MBE invited A. Georgakilas 9:30 9:45 Regrowth of GaN quantum wells on GaN ... |
|||
|
Source: Pfeifer, Holger - Institut für Künstliche Intelligenz, Universität Ulm |
|||
|
Collection: Computer Technologies and Information Sciences |
|||
| 97 | 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics | ||
|
Summary: . Comparison of the stress properties between the nanodots, nanostripes, and continu- ous GaN film grown... in the unmasked area of the continuous GaN film. The fre- quency shift of the E2 optical phonons shows... that the residual strain in the nanostripes is relaxed compared to the continu- ous ... |
|||
|
Source: Sirenko, Andrei - Department of Physics, New Jersey Institute of Technology |
|||
|
Collection: Physics ; Materials Science |
|||
| 98 | phys. stat. sol. (a) 204, No. 2, 439446 (2007) / DOI 10.1002/pssa.200673963 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | ||
|
Summary: -axis lies in the film plane such as the A-plane (1120) and the M-plane (1100) [11]. In this study we have... , can be obtained as follows. An A-plane film under in-plane biaxial strain is free to expand... in a modulation spectroscopy measurement on good quality InN samples. We next discuss the case of ... |
|||
|
Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
|||
|
Collection: Materials Science |
|||
| 99 | phys. stat. sol. (c) 2, No. 7, 24462449 (2005) / DOI 10.1002/pssc.200461513 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | ||
|
Summary: Introduction There is considerable interest in the growth of high structural quality GaN epitaxial films... and thermal expansion coefficients between the GaN film and substrate [1]. Sufficient residual strain... the relatively wide range 566568 cm1 [25], suggesting that freestanding ... |
|||
|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
|||
|
Collection: Materials Science |
|||
| 100 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,Vol.: 8 Issue: 2 Pages: 640-644, FEB 2008 Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron | ||
|
Summary: of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3- HEMT structures with 2nm-thick AlN interlayer... and promotes lateral growth of the GaN films [10]. Although AlN nucleation layers have been widely used, many... films (AlN and GaN) and Al0,3Ga0.7N/Al2O3- HEMT ... |
|||
|
Source: Ozbay, Ekmel - Department of Electrical and Rlectronics Engineering & Physics, Bilkent University |
|||
|
Collection: Physics ; Materials Science |
|||