| Sample search results for: a-plane sapphire substrates |
| 1 | Resistivity of V2O3 thin films deposited on a-plane ,,110... and c-plane ,,001... sapphire by pulsed laser deposition | ||
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Summary: as the reference. The a and c lattice parameters of the film on a-plane sapphire substrate are 0.5014 and 1.3847 nm... of the V2O3 films on c-plane and a-plane sapphire substrates. The a-plane 110 substrate was cut into a ... |
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Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut |
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Collection: Materials Science |
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| 2 | Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron x-ray diffraction | ||
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Summary: - face 11-20 . ZnO nanowires grown on a-plane sapphire are mostly oriented in the 0001 direction, which... is parallel to the sapphire 11-20 plane. For ZnO films grown on a-plane sapphire, the in-plane orientation... growth on sapphire substrates ... |
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Source: Cambridge, University of - Engineering Department, Carbon Nanotube Team |
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Collection: Materials Science |
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| 3 | Resonant micro-Raman spectroscopy of aligned single-walled carbon nanotubes on a-plane sapphire | ||
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Summary: a-plane sapphire substrate where atomic steps can be observed along the 1¯101 lattice direction. AFM... Resonant micro-Raman spectroscopy of aligned single-walled carbon nanotubes on a-plane sapphire... to characterize aligned single-walled carbon nanotubes grown on ... |
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Source: Cronin, Steve - Department of Electrical Engineering, University of Southern California |
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Collection: Materials Science |
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| 4 | I. Calizo, W. Bao, F. Miao, C.N. Lau and A.A. Balandin, "Graphene-on-Sapphire and Graphene-on-Glass" 2007 Graphene-on-Sapphire and Graphene-on-Glass | ||
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Summary: on the A-plane sapphire substrate, where we observed consistent ~5 cm-1 shift of G mode. The latter can... on A-plane and R-plane sapphire substrates with negligible miscut, i.e., without apparent involvement... ) substrate and on a set of ... |
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Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
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Collection: Materials Science |
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| 5 | Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate | ||
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Summary: Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate Sung... morphology of a-plane GaN was very much related to off-axis angle of r-plane sapphire substrate. In this case... of nonpolar a-plane GaN LED on ... |
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Source: Kim, Tae-Geun - School of Electrical Engineering, Korea University |
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Collection: Materials Science ; Engineering |
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| 6 | Growth of V2O3 thin films on a-plane (110) and c-plane (001) sapphire via pulsed-laser deposition | ||
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Summary: )- and (hh0)-type reflections in the 2 scan were present in the films on c- and a-plane sapphire substrates... -spacing of V2O3 films on c- and a-plane sapphire substrates compared to bulk value to compute out... 2p and O1s core levels of V2O3 films on (a) ... |
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Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut; Frenkel, Anatoly - Department of Physics, Yeshiva University |
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Collection: Materials Science |
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| 7 | Published: March 02, 2011 r 2011 American Chemical Society 4491 dx.doi.org/10.1021/jp110650d |J. Phys. Chem. C 2011, 115, 44914494 | ||
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Summary: - phites (NCGs) are unknown. Here, we report our attempt to grow graphene on sapphire (Al2O3) substrates... the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting direc- tions by using... roughness parameter, Ra, from 1 m  1 m scan is 0.5 Å, similar to that of ... |
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Source: Hone, James - Center for Electron Transport in Molecular Nanostructures & Department of Mechanical Engineering, Columbia University |
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Collection: Materials Science |
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| 8 | Photoluminescence properties of AlN homoepilayers with different orientations | ||
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Summary: were grown on polar c-plane and nonpolar a-plane and m-plane orientations of AlN bulk and sapphire... -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a-plane homoepilayers have the highest emission... of a-plane AlN lies in the substrate plane so that the ... |
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Source: Jiang, Hongxing - Department of Electrical and Computer Engineering, Texas Tech University |
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Collection: Engineering ; Materials Science |
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| 9 | The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass | ||
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Summary: is stronger for graphene on the A-plane sapphire substrate, where we observed consistent 5cm-1 shift of G mode... nanotube CNT arrays on A-plane and R-plane sapphire substrates with negligible miscut, i.e., without... As wafer, A-plane 11-20 ... |
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Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
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Collection: Materials Science |
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| 10 | The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass | ||
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Summary: is stronger for graphene on the A-plane sapphire substrate, where we observed consistent 5cm-1 shift of G mode... nanotube CNT arrays on A-plane and R-plane sapphire substrates with negligible miscut, i.e., without... As wafer, A-plane 11-20 ... |
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Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
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Collection: Materials Science |
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| 11 | Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy | ||
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Summary: Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate... -patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due... to the reduced defect density. Sapphire is a commonly used ... |
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Source: Gilchrist, James F. - Department of Chemical Engineering, Lehigh University |
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Collection: Materials Science |
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| 12 | Strain versus Dislocation Model for Understanding the Heteroepitaxial Growth of Jian Shi and Xudong Wang* | ||
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Summary: N epi-layer on sapphire and a-plane sapphire substrates were placed inside the quartz tube, where... system. As shown in Figure 4a, a-plane sapphire is usually used for growing c-plane orientated Zn... the epitaxial relationships between c-plane ZnO and ... |
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Source: Wang, Xudong - Department of Materials Science and Engineering, University of Wisconsin at Madison |
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Collection: Materials Science |
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| 13 | Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1xO (0 x 0.3) Films | ||
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Summary: O orientations in devices. Earlier, Gorla et al. reported the growth of a-plane ZnO films on r-sapphire substrate... scans of the a-plane ZnO and Mg0.20Zn0.80O films grown on r-sapphire substrate, respectively. Keeping... as a substrate for growth ... |
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Source: Diebold, Ulrike - Department of Physics, Tulane University |
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Collection: Materials Science ; Physics |
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| 14 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 4, NO. 3, MAY/JUNE 1998 505 Cleaved and Etched Facet Nitride Laser Diodes | ||
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Summary: -based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated... , Ltd.) on a-plane or c-plane (0001) sapphire substrates using a combination of atmospheric and low... also demonstrated with similar performance on ... |
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Source: Bowers, John - Department of Electrical and Computer Engineering, University of California at Santa Barbara |
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Collection: Engineering |
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| 15 | Surface and Coatings Technology 171 (2003) 280284 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved. | ||
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Summary: pressure, 3 8C of substrate temperature, and 81%BCl y9%HBry10%Ar.) (b) One of the sapphire etch profiles3... Science B.V. All rights reserved. doi:10.1016/S0257-8972(03)00286-X Sapphire etching with BCl y... Engineering, SungKyunKwan University, Suwon 440-746, South Korea Abstract The etching of (0 0 0 1) ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 16 | Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S795S799 High Rate Sapphire Etching Using BCl3-Based Inductively Coupled Plasma | ||
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Summary: -on technique. Sapphire etching was performed in an inductively coupled plasma etcher. The substrate... Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S795S799 High Rate Sapphire... &D Laboratory, Samsung Advanced Institute of Technology, Suwon 449-711 Sapphire was etched in an ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 17 | Materials Science and Engineering B82 (2001) 5052 High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively | ||
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Summary: of sapphire were measured as a function of gas combination of Cl2/BCl3 and Ar/Cl2/ BCl3. The substrate... , and 70°C of the substrate temperature and (d) 12 mm mechanically polished sapphire wafer. ions, therefore... at 4.0 Pa, 800 W/-300 V, and 70°C of substrate temperature, the ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 18 | Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching | ||
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Summary: to the mechanically hard and chemically inert sapphire substrate is made possible by an inductively coupled plasma... envi- ronments. Lately, sapphire has been successfully and massively used as a substrate material... the two material systems.7 Forming micro- lenses directly on the GaN-grown ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 19 | Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics | ||
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Summary: (figure 4(a)). Another VLSE example is ZnO nanowires grown epitaxially on a-plane (110) sapphire substrate... temperature, figure 6(a) [41]. Figure 6(b) shows vertical ZnO nanowire arrays on a-plane sapphire substrate... structure. (b) Arrays of ZnO nanowires grown ... |
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Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
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Collection: Chemistry ; Materials Science |
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| 20 | Diamond and Related Materials, 3 (1994) 1375-1380 1375 Deposition of diamond films on sapphire: studies of interfacial properties | ||
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Summary: ) Abstract Polycrystalline diamond films were grown on single crystal sapphire substrates using hot filament... on the sapphire prior to the diamond CVD step. Patterned silicon-on-sapphire wafers were then used as substrates... material onto which doped diamond is deposited. Other ... |
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Source: Bristol, University of - School of Chemistry, CVD Diamond Group |
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Collection: Chemistry ; Materials Science |
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| 21 | Polarization-dependent reflectivity from dielectric nanowires Y. Du, Song Han, Wu Jin, C. Zhou, and A. F. J. Levia) | ||
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Summary: grown primarily normal to the surface of a sapphire substrate has a dramatic influence... to the presence of GaN nanowires on a sapphire substrate. Controlled growth of single-crystal GaN nanowires... on a sapphire substrate is achieved using chemical vapor deposi- ... |
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Source: Levi, Anthony F. J. - Departments of Electrical Engineering & Physics and Astronomy, University of Southern California |
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Collection: Engineering ; Physics |
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| 22 | Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown | ||
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Summary: and impurity incorporation effects will be discussed. Experiment PG substrates of basal plane sapphire, A-plane... growth technique using periodically grooved substrates of sap- phire(0001), sapphire(11220) and 6H... of high-quality AlGaN on a sapphire ... |
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Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 23 | In-plane c-axis oriented barium ferrite films with self-bias and low microwave loss | ||
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Summary: -plane c-axis IPCA oriented barium ferrite BaM films on a-plane 112¯0 sapphire substrates with low... on a- and m-plane sapphire substrates. High RR values above 0.9 were obtained for PLD films on a-plane... -plane sapphire ... |
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Source: Patton, Carl - Department of Physics, Colorado State University |
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Collection: Physics ; Materials Science |
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| 24 | 1066 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 15, NO. 4, JULY/AUGUST 2009 Metalorganic Vapor Phase Epitaxy of III-Nitride | ||
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Summary: Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate... ) growth of GaN on nanopatterned AGOG sapphire substrates was per- formed, and characteristics of the light... -emitting diode (LED) de- vices grown on patterned sapphire and ... |
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Source: Gilchrist, James F. - Department of Chemical Engineering, Lehigh University |
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Collection: Materials Science |
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| 25 | Effect of hydrogen uptake and substrate orientation on the flux penetration in NbHx thin films | ||
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Summary: -ray measurements on the as-grown films on A- and R-plane substrates. For A-plane sapphire we find that the (1 1 0... different magnetic field patterns in niobium thin films on A- plane and R-plane sapphire substrates. The mag... Hc2 ¼ 0:6 T for ... |
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Source: Maret, Georg - Fachbereich Physik, Universität Konstanz; Wijngaarden, Rinke J. - Afdeling Natuur- en sterrenkunde, Vrije Universiteit Amsterdam |
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Collection: Materials Science ; Physics |
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| 26 | Appl Phys A DOI 10.1007/s00339-008-5012-2 | ||
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Summary: substrates (A plane, average terrace width well below 1000 Å) and Si(100) wafers covered by their native... reciprocal-space maps acquired during growth of DIP on sapphire at 403 K substrate temperature. Already... oxide and sapphire substrates. ... |
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Source: Schreiber, Frank - Bereich für Physik der Molekularen und Biologischen Materie, Universität Tübingen |
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Collection: Materials Science ; Chemistry |
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| 27 | EFFECT OF SUBSTRATE ORIENTATION AND HYDROGEN IMPURITIES ON FLUX | ||
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Summary: induction Bz in a 500 nm Nb thin film on an A- plane substrate after zero field cooling to 4.2 K... in a Nb thin film on an A-plane substrate at 6.8 mT after ZFC to 4.2 K. The scale-bar indicates... for the Nb films on A-plane substrates. The ... |
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Source: Maret, Georg - Fachbereich Physik, Universität Konstanz |
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Collection: Physics |
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| 28 | Thin Solid Films 435 (2003) 242246 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved. | ||
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Summary: pressure, and dc bias voltage to the substrate. 2. Experimental details In this study, sapphire etching... of the magnetic field was less than 3.5% in the 6-inch diameter substrate. Sapphire wafers with (0001) orientation... .V. All rights reserved. doi:10.1016/S0040-6090Z03.00334-1 High rate ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 29 | Controlled Growth of ZnO Nanowires and Their Optical Properties** | ||
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Summary: of ZnO nanowires grown on a-plane sapphire substrate. Fig. 7. XRD pattern of ZnO nanowires on sapphire... growth of line- and square-patterned ZnO nano- wires on a-plane sapphire substrate. Fig. 10. ZnO nanowire... vertical ZnO nanowire arrays on ... |
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Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
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Collection: Chemistry ; Materials Science |
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| 30 | IN-SITU RHEED AND STM INVESTIGATIONS ON THE EPITAXIAL GROWTH OF FE/PD MULTILAYERS ON | ||
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Summary: -ready polished - Al2O3 (sapphire) single crystals, which are cut parallel to the c- axis [a-plane, (11... @ttphysik.uni-duisburg.de We present the preparation of (001) oriented (Fe/Pd) multilayer films on sapphire substrates... guns onto sapphire substrates. We use ... |
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Source: Duisburg-Essen, Universität - Fachbereich Physik, Theoretical Low-Temperature Physics Group |
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Collection: Physics |
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| 31 | Belgirate, Italy, 28-30 September 2005 THERMAL MODELLING OF MULTI-FINGER ALGAN/GAN HEMT's | ||
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Summary: grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal... for multi-finger HEMTs: a flip-chip integration and an integration where the sapphire substrate is removed... N amplifier is to be found in the use of SiC ... |
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Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 32 | Orientation Relationships of Copper Crystals on C-Plane Sapphire Stefano Curiotto1 | ||
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Summary: particles have been grown on sapphire (0001) substrates by dewetting a copper film either in the solid... on oxide substrates. Much of the previous work on copper-sapphire has focused on the OR of solid copper... films deposited (usually from the vapor phase) on (0001) oriented (i.e., ... |
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Source: Rohrer, Gregory S. - Department of Materials Science and Engineering, Carnegie Mellon University |
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Collection: Materials Science |
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| 33 | Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire | ||
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Summary: (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use... phase epitaxy (MOVPE) of GaN on sapphire substrate, the low-temperature GaN buffer layer is etched... -back and recovery process employed in conventional MOVPE of GaN on sapphire ... |
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Source: Gilchrist, James F. - Department of Chemical Engineering, Lehigh University |
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Collection: Materials Science |
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| 34 | Real-Time Observation of Structural and Orientational Transitions during Growth of Organic Thin Films | ||
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Summary: layer as a rather smooth surface, sapphire (A-plane, average terrace width well below 1000 A... with the substrate, due to the stepped sapphire surface and slightly higher van der Waals interaction... oxide, on stepped sapphire, and on rubrene as an organic model surface. We identify ... |
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Source: Schreiber, Frank - Bereich für Physik der Molekularen und Biologischen Materie, Universität Tübingen |
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Collection: Materials Science ; Chemistry |
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| 35 | Refractive indices of ZnSiN2 on r-plane sapphire Department of Mathematics, University of California, Los Angeles, Los Angeles, California 90095 | ||
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Summary: -nm-thick a-plane GaN buffer layer grown on r-plane sapphire. The film was visually transparent, had... , the film samples under study contained a thin, 40 nm a-plane GaN buffer. For accurate determination... Refractive indices of ZnSiN2 on r-plane sapphire B. P. Cook Department of Mathematics, University |
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Source: Avrutsky, Ivan - Department of Electrical and Computer Engineering, Wayne State University |
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Collection: Engineering |
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| 36 | Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition | ||
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Summary: choice due to 1 it can heteroepitaxially grow on sapphire and Si 111 at low substrate temperatures,8,9 2... grown ZnO film on sapphire by pulsed laser deposition at various substrate temperatures. An ArF excimer... solid and dashed lines a and b spectra of ZnO film on a sapphire 0001 ... |
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Source: Kwok, Hoi S. - Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology |
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Collection: Engineering ; Materials Science |
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| 37 | Supporting Information In-situ TEM Observation of Heterogeneous Phase | ||
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Summary: : Experimental setup for Ag2Te NW synthesis. Sapphire substrates were placed about 12 cm from the precursor (D1... ~130 and (b) 120 . #12;4 Figure S4. (a,b) The corresponding FFT patterns of a sapphire substrate and the Ag2Te... enclosed with a sapphire substrate and ... |
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Source: Ihee, Hyotcherl - Department of Chemistry, Korea Advanced Institute of Science and Technology |
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Collection: Chemistry |
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| 38 | Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas | ||
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Summary: Dry etching of sapphire substrate for device separation in chlorine- based inductively coupled... voltage, and 70 8C of substrate temperature. When the sapphire etching was performed with 10% Ar in 20%Cl2... In this study, sapphire wafers were etched using magnetized inductively coupled ... |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 39 | Polarized photoluminescence and absorption in A-plane InN films Jayeeta Bhattacharyya, Sandip Ghosh,a | ||
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Summary: wurtzite InN films grown on R-plane 11¯02 sapphire substrates using molecular beam epitaxy. For A-plane... : sangho10@tifr.res.in FIG. 1. High resolution XRD data on the A-plane InN film on R-plane sapphire... modified by strain. For A-plane wurtzite nitride films on ... |
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Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
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Collection: Materials Science |
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| 40 | This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research | ||
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Summary: , and A-plane (11¯20) sapphire substrates. We also outline the temperature dependent Raman scattering... interaction between graphene and A-plane sapphire substrates. A similar effect was reported for carbon... and graphene on standard ... |
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Source: Balandin, Alexander- Department of Electrical Engineering, University of California at Riverside |
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Collection: Materials Science |
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| 41 | Understanding rubber friction in the presence of water using sum-frequency generation spectroscopy | ||
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Summary: structure of water between a poly dimethylsiloxane PDMS and a sapphire substrate. The observation of SFG... indicates that the contact spot between the PDMS lens and the sapphire substrate is heterogeneous. Within... with the surface hydroxyl groups on the sapphire ... |
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Source: Dhinojwala, Ali - Department of Polymer Science, University of Akron |
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Collection: Materials Science |
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| 42 | WILEY-VCH Verlag GmbH, 69451 Weinheim, Germany, 2002 0947-6539/02/0806-1260 $ 17.50+.50/0 Chem. Eur. J. 2002, 8, No. 61260 P. Yang et al. | ||
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Summary: grown epitaxially on an a-plane (110) sapphire substrate.[15] ZnO nanowires have wurzite structure... O nanowire arrays grown the a-plane sapphire substrate. Their diameters range from 70 ± 120 nm and lengths... on the a-plane ... |
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Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
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Collection: Chemistry ; Materials Science |
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| 43 | JOURNALDE PHYSIQUE IV ColloqueC3, supplementau Journalde Physique 11, Volume 3, aoDt 1993 457 | ||
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Summary: for the fabrication of prototype pressure sensors on a silicon on sapphire (SOS) and sapphire substrates from... on the sapphire substrate (thickness of 530 pm) gave gauge factors of 31-48. Temperature coefficients... sensors on silicon-on-sapphire (SOS) and ... |
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Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 44 | Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes | ||
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Summary: InN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro... efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire... of GaN-based blue and green LEDs grown on sapphire and GaN ... |
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Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 45 | ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos | ||
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Summary: The active substrate of the IOCC is a Silicon-on- Sapphire (SoS) mixed signal device fabricated using... digital and analog circuitry in the substrate. Unlike conventional silicon CMOS, the insulating sapphire... sapphire Substrate (transparent) 250 µm Figure 1: ... |
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Source: Bakos, Jason D. - Department of Computer Science and Engineering, University of South Carolina |
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Collection: Biology and Medicine ; Computer Technologies and Information Sciences |
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| 46 | Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting | ||
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Summary: order of magnitude less than those grown on c-plane sapphire substrate. The growth defects introduced... order of magnitude compared to those on sapphire substrate. r 2006 Elsevier B.V. All rights reserved... found on the LED ARTICLE IN PRESS 10 300 m bare unseparated Die GaN Substrate ... |
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Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 47 | Alberto W. Mello Kenneth M. Liechti1 | ||
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Summary: conditions. As a result, sapphire substrates have been used along with mixtures of self-assembled monolayers... sapphire sub- strates. It was not detected in the experiments with the coated sapphire substrates... a series of experiments and analyses that were used to examine crack growth ... |
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Source: Liechti, Kenneth M. - Department of Aerospace Engineering and Engineering Mechanics, University of Texas at Austin |
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Collection: Materials Science ; Engineering |
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| 48 | Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular | ||
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Summary: was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via... a silicon substrate or c-plane and a-plane sapphire substrates. Subsequent vapor-liquid-solid growth of Ga... Society Published on ... |
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Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
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Collection: Chemistry ; Materials Science |
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| 49 | Hydride vapor phase epitaxial growth of a high quality GaM film using a ZnO buffer layer | ||
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Summary: ] sapphire substrates. Var- ious intermediate layers have been employed for the prep- aration of high quality... layer and the sapphire substrate results in improved electrical, photoluminescent, crystalline... with a thick- ness of 0.3 to 0.85 mm were grown with easeon basal plane ... |
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Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 50 | 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics | ||
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Summary: .200778648 Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates J... grown on GaN and sapphire substrates of different sizes at current densities up to 267 A/cm2 . Analysis... on sapphire substrate. The lowest thermal ... |
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Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 51 | Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates | ||
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Summary: grown on one-side-polished a-plane sapphire substrates to thicknesses of 2 µm and 500 nm, respectively... , the epitaxial relationship between ZnO and a-plane sapphire substrate is (0001)ZnO || (112h0)Al2O3, [011h0]Zn... lattice. As a result, the lateral growth of ... |
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Source: Wang, Xudong - School of Materials Science and Engineering, Georgia Institute of Technology |
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Collection: Engineering |
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| 52 | Low-dislocation-density AlxGa1(xN single crystals grown on grooved substrates | ||
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Summary: -plane sapphire (0001) and (11/ ¯2/0), 6HÁ/SiC(0001)Si and Si(111), were used. The surface of the substrates... are summarized in Table 1. The sapphire (0001) and (11/ ¯2/0), 6HÁ/SiC(0001)Si, and Si(111) substrates were... /SiC and PGÁ/Si Table 1 Configurations of PG-substrates and ... |
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Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 53 | Huge compact flux avalanches in superconducting Nb thin films | ||
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Summary: in superconducting niobium thin films on A-plane ð1120Þ sapphire substrates. Such compact and burst-like flux... vacuum (UHV) conditions (base pressure 2·10À7 Pa) on A-plane ð1120Þ sapphire substrates. During... thin film on an A-plane ... |
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Source: Wijngaarden, Rinke J. - Afdeling Natuur- en sterrenkunde, Vrije Universiteit Amsterdam |
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Collection: Materials Science ; Physics |
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| 54 | HETEROEPITAXY AND CHARACTERIZATION OF LOW-DISLOCATION-DENSITY T. Detchprohm1 | ||
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Summary: nitride single crystal films on sapphire substrates using low-temperature (LT) buffer layer technique [1... discussed. EXPERIMENT Periodically grooved (PG) substrates of basal plane sapphire, Si(111) and 6H-SiC (0001... . An nucleation layer of LT-AlN was deposited on a PG-sapphire ... |
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Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 55 | Journal of Crystal Growth 288 (2006) 218224 InN: A material with photovoltaic promise and challenges | ||
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Summary: the sapphire substrates. r 2006 Published by Elsevier B.V. PACS: 81.15.Hi; 78.66.Fd; 61.10.Nz Keywords: A1. X... matching to InN compared to traditional substrates such as sapphire [3]. Ge also allows for a vertical... substrates that were solvent cleaned. The Ge and ... |
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Source: Cartwright, Alexander N. - Institute for Lasers, Photonics and Biophotonics & Department of Electrical Engineering, State University of New York at Buffalo |
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Collection: Materials Science ; Engineering |
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| 56 | A Study of Sapphire Etching Characteristics Using BCl3-based Inductively Coupled Plasmas Chang Hyun JEONG, Dong Woo KIM, Kyong Nam KIM and Geun Young YEOM | ||
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Summary: 1. Introduction Sapphire (Al2O3) wafers have been widely used as substrates for growing Ga... A Study of Sapphire Etching Characteristics Using BCl3-based Inductively Coupled Plasmas Chang Hyun... , 2002) Cl2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire |
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Source: Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University |
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Collection: Materials Science |
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| 57 | Journal of Crystal Growth 300 (2007) 3741 Formation of large-area freestanding gallium nitride substrates by | ||
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Summary: substrates by natural stress-induced separation of GaN and sapphire Adrian D. WilliamsÃ, T.D. Moustakas... . A number of GaN thick films were grown onto sapphire substrates by the hydride vapor-phase epitaxy (HVPE... the sapphire substrate post-growth over the entire ... |
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Source: Boston University, Center for Nanoscience and Nanobiotechnology |
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Collection: Materials Science |
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| 58 | Nitride deep-ultraviolet light-emitting diodes with microlens array M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jianga | ||
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Summary: on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes UV LEDs on sapphire substrates... with an integrated microlens array. Microlenses with a diameter of 12 m were fabricated on the sapphire substrate... through the sapphire substrates. ... |
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Source: Jiang, Hongxing - Department of Electrical and Computer Engineering, Texas Tech University |
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Collection: Engineering ; Materials Science |
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| 59 | Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b) | ||
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Summary: substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C... substrates like sapphire, GaAs, and CdTe wafers at identical MOVPE conditions and demonstrate the substrate... - ticular microrelief depending on the substrate. ... |
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Source: Viña, Luis - Departamento de Física de Materiales, Universidad Autónoma de Madrid |
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Collection: Materials Science ; Physics |
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| 60 | Subscriber access provided by UNIV OF AKRON The Journal of Physical Chemistry B is published by the American Chemical | ||
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Summary: (C21H44) in contact with polystyrene films (PS) spin coated on a sapphire substrate. The interfacial... ) of PS, the hexadecanol molecules penetrate through the PS film and adsorb on the sapphire substrate... the hydrophilic sapphire substrate. The adsorbed ... |
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Source: Dhinojwala, Ali - Department of Polymer Science, University of Akron |
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Collection: Materials Science |
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| 61 | Structural characterization of non-polar (112 0) and semi-polar (112 6) GaN films grown on r-plane sapphire | ||
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Summary: epitaxy (MBE) has the a-plane (112 0) parallel to the sapphire surface [79]. Due to the large lattice... . The growth of {1013} or {112 2} semi-polar GaN on m-plane {1010} sapphire substrates using the technique... -polar/ semi-polar nitride films grown by different methods on sapphire ... |
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Source: Boston University, Center for Nanoscience and Nanobiotechnology |
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Collection: Materials Science |
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| 62 | Green light emitting diodes on a-plane GaN bulk substrates Theeradetch Detchprohm,1,a | ||
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Summary: Green light emitting diodes on a-plane GaN bulk substrates Theeradetch Detchprohm,1,a Mingwei Zhu,1... N and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline... nonpolar LED and c-plane sapphire polar LED . GaN bulk templates with an ... |
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Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 63 | Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire | ||
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Summary: Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire Sandip... ; published online 20 July 2005 We have investigated a 112¯0 -oriented A-plane GaN film on R-plane sapphire... recently with A-plane MQWs on R-plane sapphire.3,4 The ... |
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Source: Ghosh, Sandip - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research |
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Collection: Materials Science |
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| 64 | Category Title: Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced | ||
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Summary: of the sapphire post turn over and run horizontally i.e. parallel to the sapphire substrate. Further study reveals... . Follstadt, S. L. Lee, D. D. Koleske Motivation--GaN grown on any currently available substrates has... an inherent problem of having to overcome a large lattice mismatch with the ... |
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Source: Sandia National Laboratories, Semiconductor Materials and Device Sciences Department, Solid-State Lighting Project |
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Collection: Energy Storage, Conversion and Utilization |
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| 65 | J. Phys.: Condens. Matter 10 (1998) 1158911594. Printed in the UK PII: S0953-8984(98)96568-7 Ellipsometric study of the prewetting transition at the | ||
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Summary: on a sapphire substrate [2]. They observed that the prewetting line intersects the coexistence curve... -8984(98)96568-7 Ellipsometric study of the prewetting transition at the mercurysapphire interface Yoshinori Ohmasa, Yukio... against an optically transparent sapphire window at high temperatures and ... |
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Source: McDonald, Kirk - Department of Physics, Princeton University |
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Collection: Physics |
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| 66 | JOURNAL DE PHYSIQUE Colloque C4, supplkment au no 10, Octobre 1972, page C4-65 PHONON TRANSMISSION ALONG SAPPHIRE PLATES | ||
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Summary: . In one dimension, with sapphire to substrate resistance RBper unit length, and sapphire resistance Rs per... ALONG SAPPHIRE PLATES W. DAY (*) Royal Society Mond Laboratory University of Cambridge Rbsumb. -Nous... frequency phonons, both thermally distri- buted and monochromatic, are generated and detected ... |
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Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 67 | Electronic Charge Transport in Sapphire Studied by Optical-Pump/THz-Probe Spectroscopy | ||
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Summary: . In addition, we investigated one high-purity Czochralski-grown sapphire substrate from Union Carbide that had... 1 Electronic Charge Transport in Sapphire Studied by Optical-Pump/THz-Probe Spectroscopy F. Wang,1... ) with ultrafast photo-excitation is applied to probe the complex conductivity of the charge carriers in ... |
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Source: Heinz, Tony F. - Center for Electron Transport in Molecular Nanostructures & Departments of Physics & Electrical Engineering, Columbia University |
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Collection: Engineering ; Physics ; Materials Science |
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| 68 | PHYSICAL REVIEW B 83, 144504 (2011) Persistence of superconductivity in niobium ultrathin films grown on R-plane sapphire | ||
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Summary: involved A-plane-oriented (1000) sapphire5 as the growing substrate. However, the high step-edge roughness6... . Heteroepitaxy of niobium is best3,4 performed on sapphire substrates since both their lattice parameters... to the sapphire substrate, ... |
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|
Source: Canet, Léonie - Laboratoire de Physique et Modélisation des Milieux Condensés, Université Joseph Fourier |
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Collection: Physics |
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| 69 | JOURNAL DE PHYSIQUE IV Colloque C5, supplCment au Journal de Physique 11,Volume 5 , juin 1995 | ||
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Summary: with high critical current densities should be deposited on substrates such as silicon and sapphire... /YSZ/Si [8] multilayers, but high critical current densities have only been obtained on sapphire substrates[9... ) film reflections and the (300) and (006)-sapphire and (202)-silicon ... |
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Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 70 | p s sapplications and materials science www.pss-a.com | ||
|
Summary: parameters: Eu concentration, post-growth anneal and substrate (sapphire, silicon and glass). phys. stat. sol... , post-growth anneal and substrate (sapphire, silicon and glass). #12;phys. stat. sol. (a) 205, No. 1... on sapphire substrates exhibit the highest gain ... |
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|
Source: Cincinnati, University of - Nanoelectronics Laboratory |
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Collection: Engineering ; Materials Science |
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| 71 | Growth of magnesium oxide thin lms using single molecular precursors by metalorganic chemical vapor deposition | ||
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Summary: Abstract Thin ®lms of MgO have been deposited on Si(100) and c-plane sapphire substrates by the metal... ] oriented polycrystalline MgO ®lms were obtained on both Si(100) and c-plane sapphire substrates using... Lu et al. [9] grew thin MgO ®lms with [100] orientation on SrTiO3 and r-plane ... |
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|
Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University |
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Collection: Materials Science |
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| 72 | High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding | ||
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Summary: beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300°C... was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate... on the thin film induced by thermal expansion mismatch between the thin film and the ... |
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Source: |
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Collection: Engineering ; Energy Storage, Conversion and Utilization |
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| 73 | [an error occurred while processing this directive] site search | ||
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Summary: of Non-Polar III-Nitride Films Over a-Plane SiC Substrates E2.9 Jiawei Li, Zheng Gong, Changqing Chen... Density in GaN Films Grown on Sapphire Substrates E3.2 Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang... , Lawrence H. Robins, and Hyun-Keel Shin Excess Carrier Lifetime Measurements for GaN on ... |
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|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 74 | Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition | ||
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Summary: of sapphire and Pt substrates with fairly small deviation. High-resolution TEM HRTEM micrographs are taken... . To further confirm this observation, we dispersed ZnO nanoparticles on sapphire substrates and tried to grow... emission, it is important to control the alignment of nanorods. Three kinds of ... |
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|
Source: Cao, Hui - Department of Applied Physics, Yale University |
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Collection: Physics |
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| 75 | Test mass materials for a new generation of gravitational wave Sheila Rowan*a), Robert L. Byera, Martin M. Fejera, Roger Routea, Gianpietro Cagnoli', David R.M. | ||
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Summary: sizes etc, has left two candidates for consideration as transmissive substrates: -sapphire and fused... by this table shows the comparative figures of merit for fused silica and sapphire substrates when evaluating... is assumed in each case. From Table 1 it can be seen that the use of ... |
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|
Source: Byer, Robert L. - E.L. Ginzton Laboratory & Department of Applied Physics, Stanford University |
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Collection: Engineering ; Physics |
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| 76 | Orientation relationships of copper crystals on c-plane sapphire Stefano Curiotto a, | ||
|
Summary: Copper particles have been grown on sapphire (0 0 0 1) substrates by dewetting a copper film either... deposited (usually from the vapor phase) on (0 0 0 1) oriented (i.e. c- sapphire) substrates [16]. The most... preparation procedure. Sapphire substrates were ... |
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|
Source: Rohrer, Gregory S. - Department of Materials Science and Engineering, Carnegie Mellon University |
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Collection: Materials Science |
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| 77 | INSTITUT POLYTECHNIQUE DE GRENOBLE attribue par la biblioth`eque | ||
|
Summary: of the substrate temperature . . . . . . . . . . 73 3.1.4.2 Discussion on m-sapphire nitridation... pousser des hexagones penchés comme vous pourrez le lire dans la suite. Hors, pas de substrat = pas d... particulier aux cons´equences de la nitruration du substrat avant la croissance. En effet, la ... |
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|
Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 78 | Properties of GaN grown at high rates on sapphire and on 6HSiC S. Fischer,a) | ||
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Summary: substrate material for ob- taining the highest quality of homoepitaxial films. At present -sapphire... grown by HTVPE from metallic Ga and gaseous NH3 on 0001 sapphire and 0001 6HSiC substrates. A schematic... stable when SiC is used as a substrate instead of ... |
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|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 79 | Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers | ||
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Summary: properties of thin GaN and AlGaN films grown on both sapphire and Si substrates. We report... N buffer layer onto the sapphire substrate Figs. 1 a and 1 b . Due to the polar phonons sapphire has... this evidence we conclude that a nitridation of sapphire is obtained ... |
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|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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Collection: Materials Science ; Physics |
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| 80 | MOCVD growth mechanisms of ZnO nanorods G Perillat-Merceroz1, 2 | ||
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Summary: on (0001) sapphire substrates. Arrays of well-aligned, vertical nanorods were obtained with uniform lengths... and diameters. A thin wetting layer in epitaxy with the sapphire substrate is formed first, followed by pyramids... -plane sapphire substrates were annealed ... |
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|
Source: Ecole Polytechnique, Centre de mathématiques |
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Collection: Mathematics |
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| 81 | Invited Talks Inv.1: Monday, June 8 at 09:30h | ||
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Summary: . Czernecki (Institute of High Pressure Physics PAS, Warsaw, Poland) et al. A.09 Growth of a-plane GaN layers... on slightly misoriented r-plane Sapphire substrates. S. Schwaiger et al. (Institut für Optoelektronik... , Universität Ulm, Germany) A.10 Effect of Fe doping on optical properties of SI GaN bulk ... |
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|
Source: Pfeifer, Holger - Institut für Künstliche Intelligenz, Universität Ulm |
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|
Collection: Computer Technologies and Information Sciences |
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| 82 | phys. stat. sol. (c) 2, No. 7, 24462449 (2005) / DOI 10.1002/pssc.200461513 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | ||
|
Summary: strain in the GaN epilayer grown on sapphire substrate by micro-Raman spectroscopy. Operating in confocal... substrates such as sapphire, however, contain residual strains produced by mismatch in the lattice constants... ) and substrate (300 µm: sapphire), respec- ... |
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|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
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Collection: Materials Science |
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| 83 | Ninth International Conference on Solid State Lighting Conference 7422 -Proceedings of SPIE Volume 7422 | ||
|
Summary: in direct heteroepitaxial growth of a-plane GaN material on r-plane sapphire. Figure 5 shows a typical case... Light Emitting Diodes on a-Plane GaN Bulk Substrates," Appl. Phys. Lett. 92, 24119 (2008). 14 Mingwei... results in homoepitaxy on polar c-plane, and non-polar a-plane and ... |
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|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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|
Collection: Materials Science ; Physics |
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| 84 | Supporting Information Steering epitaxial alignment of Au, Pd, and AuPd | ||
|
Summary: region by carrier gas, where metal NWs were grown on sapphire substrates. The distance from the center... 3. Magnified top-view SEM image of triangular plates grown on a c-cut sapphire substrate... -octahedral Au seed on a c-cut sapphire and an Nb-doped SrTiO3 (110) ... |
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|
Source: Ihee, Hyotcherl - Department of Chemistry, Korea Advanced Institute of Science and Technology |
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Collection: Chemistry |
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| 85 | Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC | ||
|
Summary: of the surface structure of MBE-grown GaN layers on sapphire (0001) and 6H-(0001) SiC substrates. A different set... on MOCVD GaN/ sapphire substrates, while the nitrogen-face has been obtained on SiC and bare sapphire... substrates; sapphire ... |
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|
Source: Feenstra, Randall - Department of Physics, Carnegie Mellon University |
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|
Collection: Materials Science |
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| 86 | Controlled Molecular Alignment in Phthalocyanine Thin Films on Stepped Sapphire Surfaces** | ||
|
Summary: on A-plane sapphire substrates, the molecules align without significant azimuthal dispersion. Growth... of the growth and structure of thin films of copper hexadecafluoro- phthalocyanine (F16CuPc) on A-plane sapphire... -axis of the sapphire, which serve as templates ... |
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|
Source: Schreiber, Frank - Bereich für Physik der Molekularen und Biologischen Materie, Universität Tübingen |
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|
Collection: Materials Science ; Chemistry |
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| 87 | Journal of Crystal Growth 235 (2002) 129134 Low-dislocation-density GaN and AlxGa1xN (xp0.13) | ||
|
Summary: N on grooved substrates of sapphire(0 0 0 1) and ð1 1 %2 0Þ; 6H-SiC(0 0 0 1)Si, and Si(1 1 1) by metalorganic... growth rate was observed for GaN grown on PG-sapphire and PG- SiC substrates. While a fast vertical... /h for GaN grown on PG-sapphire, PG-SiC and PG-Si ... |
|||
|
Source: Detchprohm, Theeradetch - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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|
Collection: Materials Science ; Physics |
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| 88 | Subscriber access provided by -Access paid by the | UC Berkeley Library Journal of the American Chemical Society is published by the American Chemical | ||
|
Summary: , and opto- electronic applications. Vertical ZnO nanowires were prepared on a-plane sapphire substrates... were removed from their native sapphire substrate and transferred onto a blank Si/SiO2 wafer... on a sapphire substrate is shown in Figure ... |
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|
Source: Yang, Peidong - Department of Chemistry, University of California at Berkeley |
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|
Collection: Chemistry ; Materials Science |
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| 89 | JOURNAL DE PHYSIQUE IV CZ-95 3 Colloque C2, suppl. au Journal de Physique 11, Vol 1, septembre 1991 | ||
|
Summary: and multilayered configurations have been successfullygrown on sapphire (a-Al203) single-crystal substrates. Seven... distinctepitaxialorientationrelationshipsbetween the films and the substrates were observed. Discussion on these epitaxial relationships based... , and passive components into a single chip of ... |
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|
Source: Ecole Polytechnique, Centre de mathématiques |
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|
Collection: Mathematics |
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| 90 | JOURNAL DE PHYSIQUE IV Colloque C5, supplCment au Journal de Physique 11, Volume 5,juin 1995 | ||
|
Summary: .Slides of polished (li02)sapphire having dimensions 5x 5 I- were used as a substrate. Tlie substrates were cleaned... of the prepared buffer substrates, we liave deposited a YBa3Cu307film on the top of CeOy'sapphire substrate... )sapphire The ... |
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|
Source: Ecole Polytechnique, Centre de mathématiques |
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|
Collection: Mathematics |
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| 91 | Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures | ||
|
Summary: of submicron GaN islands on GaN-sapphire, AlN-sapphire, and bare sapphire substrates. It is shown that strain... -plane sapphire substrate. A 100-nm-thick SiO2 layer was deposited on each substrate by sputtering. Conventional... -islands were grown ... |
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|
Source: Sharma, Pradeep - Department of Mechanical Engineering, University of Houston |
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|
Collection: Materials Science ; Engineering |
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| 92 | 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (a) 205, No. 7, 16191624 (2008) / DOI 10.1002/pssa.200723591 | ||
|
Summary: .pss-a.com physica MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates Muhammad Jamil... the study of MOVPE of InN on GaN tem- plates grown on sapphire and silicon(111) substrates. Ther- modynamic... -III precursor and NH3 as the group V precursor. Sapphire ... |
|||
|
Source: Gilchrist, James F. - Department of Chemical Engineering, Lehigh University |
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|
Collection: Materials Science |
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| 93 | A TEMPERATURE ANALYSIS OF HIGH-POWER ALGAN/GAN HEMTS , Herman Oprins1 | ||
|
Summary: . The AlGaN/GaN heterostructures are usually grown on sapphire, SiC and recently also on Si substrates... . Sapphire substrates have the advantage of low cost, however, for realizing high power applications... performance for multi-finger HEMTs on sapphire substrates ... |
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|
Source: Ecole Polytechnique, Centre de mathématiques |
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|
Collection: Mathematics |
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| 94 | DOI: 10.1007/s00340-002-0884-x Appl. Phys. B (2002) | ||
|
Summary: . oron1 e. korkotian2 m. segal2 y. silberberg1, Third-harmonic microscopy with a titaniumsapphire laser... -Verlag 2002 ABSTRACT We demonstrate third-harmonic microscopy of thin biological objects using a Ti:sapphire... allows for the detection of the third-harmonic sig- nal near 270 nm. We show that, using a Ti:sapphire |
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|
Source: Silberberg, Yaron - Department of Physics of Complex Systems, Weizmann Institute of Science |
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|
Collection: Physics |
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| 95 | Optical and Structural Analysis of GaN Grown by Remote Plasma Enhanced Laser Induced | ||
|
Summary: on materials grown at temperatures 1000 C or higher, on sapphire or SiC substrates using metalorganic chemi... . In this work, we report on polycrystalline GaN grown directly on sapphire, silicon and quartz substrates using... growth of GaN on these substrates using RPE-LICVD. ... |
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|
Source: Timmers, Heiko - School of Physical, Environmental and Mathematical Sciences, Australian Defence Force Academy, University of New South Wales |
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|
Collection: Physics ; Materials Science |
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| 96 | phys. stat. sol. (c) 2, No. 7, 24202423 (2005) / DOI 10.1002/pssc.200461562 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | ||
|
Summary: - power and high-temperature applications [2]. Sapphire is commonly used as the substrate for GaN epi... -VCH Verlag GmbH & Co. KGaA, Weinheim The influence of interdiffusion on strain energy in the GaNsapphire... The impact of interdiffusion on strain energy in the GaN-sapphire system was studied. ... |
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|
Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida |
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|
Collection: Materials Science |
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| 97 | Enhancement of the Superconducting Transition Temperature of MgB2 by a Strain-Induced Bond-Stretching Mode Softening | ||
|
Summary: was observed in epitaxial films on SiC and sapphire substrates, although the Tc values were different... a systematic increase of Tc with epitaxial tensile strain in MgB2 films on both SiC and sapphire substrates... on both (0001) 4H-SiC and (0001) sapphire ... |
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|
Source: Pickett, Warren - Department of Physics, University of California, Davis |
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|
Collection: Physics |
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| 98 | Strong optical anisotropies of F16CuPc thin films studied by spectroscopic ellipsometry | ||
|
Summary: deposition simultaneously onto MgO 001 , SiO2 /Si, and A-plane (112¯0) sapphire substrates. The latter allows... onto MgO 001 , SiO2 /Si, and A-plane (112¯0) sapphire substrates at different growth conditions... on sapphire ... |
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|
Source: Schreiber, Frank - Bereich für Physik der Molekularen und Biologischen Materie, Universität Tübingen |
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|
Collection: Materials Science ; Chemistry |
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| 99 | Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Yufeng Li ( ,1 | ||
|
Summary: light-emitting diode LED wafers were grown on nanopatterned c-plane sapphire substrate by metal... covered sapphire as a substrate. Here we study 525 nm green LED wafers on nanopatterned sapphire sub... of the sapphire layer leading to a wider deflection of the ... |
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|
Source: Wetzel, Christian M. - Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute |
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|
Collection: Materials Science ; Physics |
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| 100 | The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence | ||
|
Summary: the lattice mismatch between AlN and sapphire. Usu- ally, "epiready" sapphire substrates are oxygen terminated... -polarity heterostructures of GaN on c sapphire were prepared by deposition and patterning of a thin low-temperature Al... N nucleation layer were Ga polar while those grown on the nitrided ... |
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Source: Pennycook, Steve - Materials Science and Technology Division, Oak Ridge National Laboratory |
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Collection: Materials Science |
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