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DOI http://dx.doi.org/10.1063/1.361541
Title Giant magnetoresistance induced by spin-correlation scattering in magnetic thin films and other compounds
Creator/Author Zou, L. [Institute of Solid State Physics, Academia Sinica, P.O. Box 1129, Hefei 230031 (China)] ; Gong, X.G. ; Zheng, Q. [CCAST (World Laboratory), P.O. Box 8730, Beijing, 100080]|[Institute of Solid State Physics, Academia Sinica, P.O. Box 1129, Hefei 230031 (China)] ; Pan, C.Y. [Physics Department, Center of Magnetism in Information Technology, Utah State University, Logan, Utah 84332 (United States)]
Publication Date1996 Apr 01
OSTI IdentifierOSTI ID: 280034
Report Number(s)CONF-951101--
Other Number(s)Journal ID: JAPIAU; ISSN 0021-8979; TRN: TRN: 9608M0088
Resource TypeJournal Article
Resource RelationJournal Name: Journal of Applied Physics; Journal Volume: 79; Journal Issue: 8; Conference: 40. conference on magnetism and magnetic materials, Philadelphia, PA (United States), 6-9 Nov 1995; Other Information: PBD: Apr 1996
Subject36 MATERIALS SCIENCE; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; THIN FILMS; SEMICONDUCTOR MATERIALS; RARE EARTH COMPOUNDS; MANGANESE OXIDES; TEMPERATURE DEPENDENCE; J-J COUPLING
Description/AbstractWe present the study of the giant magnetoresistance effect in ferromagnetically ordered thin film and bulk based on the Hund{close_quote}s rule coupling between the mobile {ital d} electron and the core spin of Mn ions. It has been shown that the resistivity is proportional to the spin{endash}spin correlation functions, a maximum resistivity appears near the critical point in absence of magnetic field and an applied field drives the resistivity peak to higher temperature and reduces the peak value, which is in agreement with the experiments. The giant magnetoresistance effect in thin film is attributed to the spin-correlation-dependent scattering and the low-dimensional character. {copyright} {ital 1996 American Institute of Physics.}
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: pp. 5162-5164
System Entry Date2008 Feb 04

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