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DOI 10.1103/PhysRevB.68.045419
Title Quantization condition of quantum-well states in Cu/Co(001)
Creator/Author An, J.M. ; Raczkowski, D. ; Wu, Y.Z. ; Won, C.Y. ; Wang, L.W. ; Canning, A. ; Van Hove, M.A. ; Rotenberg, E. ; Qiu, Z.Q.
Publication Date2003 Apr 15
OSTI IdentifierOSTI ID: 822835
Report Number(s)LBNL--52491
DOE Contract NumberAC03-76SF00098
Other Number(s)Journal ID: ISSN 0163-1829; R&D Project: AJ03MV; TRN: US200414%%304
Resource TypeJournal Article
Resource RelationJournal Name: Physical Review, B: Condensed Matter; Journal Volume: 68; Other Information: Journal Publication Date: 2003; PBD: 15 Apr 2003
Research OrgErnest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring OrgUSDOE Director, Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division; National Science Foundation (US)
Subject36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; PHOTOEMISSION; QUANTIZATION; REFLECTION; SUBSTRATES; THICKNESS
Related SubjectQUANTUM WELL STATES AB INITIO CALCULATIONS PHOTOEMISSION
Description/AbstractRecent photoemission data exhibit individual quantum well states (QWS) at integer numbers (1 to 20) of monolayers in a Cu(001) film grown on a Co(001) substrate film, itself grown pseudomorphically on Cu(001). Ab initio calculations confirm the concept of the quantization condition inherent in the Phase Accumulation Model (PAM) to predict the energies of QWS as a function of their thickness, and provide new insight into their nature. In addition, it is shown that band structures and reflection phases obtained from either experiment or ab initio theory can quantitatively predict QWS energies within the PAM model. It is shown that a simple superposition of oppositely traveling Bloch states, phase-shifted by the reflections from surface and interface, gives an excellent representation of the QWS within the ultrathin film. We point out an improvement to the standard LDA to better represent the image potential of the free surface and its influence on QWS. It is also shown that QWS are tolerant of interdiffusion across the Co/Cu interface, which may broaden the photoemission peaks characteristic of QWS.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: vp.
System Entry Date2008 Sep 11

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