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Title Achieving broad-area laser diodes with high output power and single-lobed far-field patterns in the lateral direction by loading a modal reflector
Creator/Author Shigihara, Kimio ; Nagai, Yutaka ; Kakimoto, Syoichi ; Ikeda, Kenji (Mitsubishi Electric Corp., Hyogo (Japan). Optoelectronic and Microwave Devices Lab.)
Publication Date1994 Aug 01
OSTI IdentifierOSTI ID: 6929085
Other Number(s)Journal ID: ISSN 0018-9197; CODEN: IEJQA7
Resource TypeJournal Article
Resource RelationJournal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States); Journal Volume: 30:8
Subject42 ENGINEERING; SEMICONDUCTOR LASERS; OPTICAL SYSTEMS; FABRICATION; LASER CAVITIES; MATHEMATICAL MODELS; OPERATION; PERFORMANCE; USES; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Description/AbstractA modal reflector, which consists of a high-reflectivity region surrounded by low-reflectivity regions, is added to the front facet of two types of broad-area laser diodes (LD's) to control the lateral models. One type of LD is the self-aligned laser with a bent active layer (SBA LD) that has a real index-guiding mechanism. The other is a planar-stripe LD that consists of a Zn-diffused region to confine the current flow and has a gain-guiding mechanism. For the SBA LD's with a modal reflector, stable single-lobed far-field patterns (FFP's) are obtained at up to 0.3 and 0.4 W output powers in continuous wave (CW) operation and pulsed operation, respectively. In addition, for planar-stripe LD's with a modal reflector, stable single-lobed FFP's are obtained at up to 0.4 W in CW operation. The lateral modes inside the cavity are analyzed by utilizing a slit model and FFP's are calculated. Good agreement is found between experimental and calculated FFP's for a large Fresnel number.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: Pages: 1683-1690
System Entry Date2009 Dec 17

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