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Title: Production of superconducting Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub x/ thin films by d. c. diode sputtering and annealing

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:6910872

Thin films of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub x/ have been produced on sapphire substrates by d.c. diode sputtering in Ar atmosphere followed by annealing O/sub 2/ at 850 C. X-ray diffraction and resistivity show the films are amorphous and insulating as sputtered but become polycrystalline and conductive upon annealing, whereupon resistance begins to fall at 98 K, becoming fully superconductive at 69 K with a mid-point at 86 K. Four-point resistance measurements are made using low frequency phase sensitive detection. Electron microprobe analysis indicates that the 1-2-3 composition of this oxide can be obtained in the film by using a Y/sub 1/Ba/sub 3.2/Cu/sub 3.9/O/sub x/ target, suggesting that resputtering of Ba and Cu occurs during the deposition. A strong interaction (most likely diffusive) can occur with the sapphire substrate which degrades the superconducting transition, necessitating shorter annealing times and lower temperatures than used for bulk powders.

Research Organization:
IBM Almaden Research Center, San Jose, California, 95120
OSTI ID:
6910872
Report Number(s):
CONF-871178-; TRN: 88-030184
Journal Information:
AIP Conf. Proc.; (United States), Vol. 165:1; Conference: Thin film processing and characterization of high temperature superconductors, Anaheim, CA, USA, 6 Nov 1987
Country of Publication:
United States
Language:
English

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