Bibliographic Citation
| Document | For copies of Journal Articles, please contact the Publisher or your local public or university library and refer to the information in the Resource Relation field. For copies of other documents, please see the Availability, Publisher, Research Organization, Resource Relation and/or Author (affiliation information) fields and/or Document Availability. |
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| DOI | http://dx.doi.org/10.1116/1.579803 |
| Title | Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001) |
| Creator/Author | Garcia, R. [Motorola Inc. Compound Semiconductor-1, Tempe, Arizona 85284 (United States)] ; Daley, K.E. ; Sego, S. ; Culbertson, R.J. [Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)] ; Poker, D.B. [Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)] |
| Publication Date | 1995 May 01 |
| OSTI Identifier | OSTI ID: 57107 |
| DOE Contract Number | AC05-84OR21400 |
| Other Number(s) | Journal ID: JVTAD6; ISSN 0734-2101; TRN: TRN: 9511M0138 |
| Resource Type | Journal Article |
| Resource Relation | Journal Name: Journal of Vacuum Science and Technology, A; Journal Volume: 13; Journal Issue: 3; Other Information: PBD: May 1995 |
| Research Org | Oak Ridge National Laboratory |
| Subject | 36 MATERIALS SCIENCE; SILICON CARBIDES; ION IMPLANTATION; GERMANIUM CARBIDES; EPITAXY; CHEMICAL VAPOR DEPOSITION; ANTIMONY IONS; SILICON IONS; KEV RANGE 100-1000; ANNEALING; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; ION CHANNELING; RUTHERFORD SCATTERING |
| Description/Abstract | Si-capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1{times}10{sup 16} ions/cm{sup 2} of 200 keV Si ions at 77 K in order to completely amorphize the layer. Three sets of samples were rapid thermal annealed for 200 s at both 600 and 800 {degree}C and for 1 min at 960 {degree}C. Samples were studied using Rutherford backscattering spectrometry and ion channeling. The carbon composition was quantified using the {sup 12}C({alpha},{alpha}){sup 12}C resonance at 4.265 MeV. It was found that the regrowth kinetics were significantly different from those of SiGe alloys. A greater thermal budget is required for regrowth. Furthermore, at the higher temperatures the carbon diffuses out of the layer leaving a carbon depleted region. {copyright} {ital 1995}{ital American} {ital Vacuum} {ital Society} |
| Country of Publication | United States |
| Language | English |
| Format | Medium: X; Size: pp. 662-665 |
| System Entry Date | 2008 Sep 15 |
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Last Updated: 11/19/2009