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DOI 10.1103/PhysRevB.64.125207
Title Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys
Creator/Author Zhang, Yong ; Mascarenhas, Angelo ; Wang, Lin-Wang
Publication Date2001 Sep 15
OSTI IdentifierOSTI ID: 40277622
DOE Contract NumberAC03-76SF00098; AC36-99GO10337
Other Number(s)Journal ID: ISSN 0163-1829; TRN: IM200111%%789
Resource TypeJournal Article
Resource RelationJournal Name: Physical Review B; Journal Volume: 64; Journal Issue: 12; Other Information: DOI: 10.1103/PhysRevB.64.125207; Othernumber: PRBMDO000064000012125207000001; 064136PRB; PBD: 15 Sep 2001
Research OrgLawrence Berkeley National Laboratory
Sponsoring Org(US)
Subject71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; BOND LENGTHS; FLUCTUATIONS; ORDER PARAMETERS; RECOMMENDATIONS; TRANSPORT; VALENCE
Description/AbstractWe have investigated the statistical effects of spontaneous ordering on the electronic and structural properties of a semiconductor alloy as a function of order parameter using an empirical pseudopotential method in conjunction with a valence force field method in a supercell approach. The theoretical modeling yields valuable information on the statistical fluctuation of electronic properties, which includes the individual band edge as well as the band gap, for understanding the effects of ordering on various optical and transport measurements. The results on the average bond lengths and the statistical distributions of different types of bonds provide a guideline for the measurability of the effects of ordering in a partially ordered alloy in terms of the order parameter.
PublisherThe American Physical Society
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: page(s) 125207-125207-5
System Entry Date2008 Sep 11

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