Bibliographic Citation
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| Title | Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection |
| Creator/Author | Shin, H. ; Kim, N.M. [Ewha Womans Univ., Seoul (Korea, Republic of). Dept. of Electronic Engineering] |
| Publication Date | 1999 Jun 01 |
| OSTI Identifier | OSTI ID: 355658 |
| Other Number(s) | Journal ID: EDLEDZ; ISSN 0741-3106; TRN: TRN: IM9931%%178 |
| Resource Type | Journal Article |
| Resource Relation | Journal Name: IEEE Electron Device Letters; Journal Volume: 20; Journal Issue: 6; Other Information: PBD: Jun 1999 |
| Subject | 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; SEMICONDUCTOR STORAGE DEVICES; PHYSICAL RADIATION EFFECTS; CHARGE COLLECTION; ERRORS; ALPHA PARTICLES; OXIDES |
| Description/Abstract | The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide. |
| Country of Publication | United States |
| Language | English |
| Format | Medium: X; Size: pp. 280-282 |
| System Entry Date | 2009 Dec 16 |
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