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Title Crystallization of pseudo-orthorhombic anorthite on basal sapphire
Creator/Author Mallamaci, M.P. ; Carter, C.B. [Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Chemical Engineering and Materials Science]
Publication Date1999 Jan 01
OSTI IdentifierOSTI ID: 316019
DOE Contract NumberFG02-92ER45465
Other Number(s)Journal ID: JACTAW; ISSN 0002-7820; TRN: TRN: IM9908%%99
Resource TypeJournal Article
Resource RelationJournal Name: Journal of the American Ceramic Society; Journal Volume: 82; Journal Issue: 1; Other Information: PBD: Jan 1999
Sponsoring OrgUSDOE, Washington, DC (United States)
Subject36 MATERIALS SCIENCE; ENERGY BEAM DEPOSITION; CRYSTALLIZATION; ANORTHITE; FILMS; GLASS; LASERS; SAPPHIRE; ELECTRON MICROSCOPY; DISLOCATIONS
Description/AbstractAnorthite-glass films were grown on basal Al{sub 2}O{sub 3} substrates using pulsed-laser deposition. The substrates were cleaned and annealed in air at 1400 C to produce crystallographically flat (0001) terraces. The films were deposited in an oxidizing environment. X-ray microanalysis confirmed the composition of the glass films to be close to that of anorthite (CaO{center_dot}Al{sup 2}O{sub 3}{center_dot}2SiO{sub 2}). Although anorthite usually has triclinic symmetry, subsequent crystallization of these films in air at 1200 C resulted in the formation of pseudo-orthorhombic CaAl{sub 2}Si{sub 2}O{sub 8} (o-anorthite), a known metastable form of the mineral. Microstructural characterization was performed using visible-light microscopy, scanning electron microscopy, and transmission electron microscopy. The films dewetted the substrate either before or after crystallization to form o-anorthite islands which had strong orientation relationships to the Al{sub 2}O{sub 3} substrate. The epitaxy of the o-anorthite islands was accompanied by a small lattice mismatch parallel to the substrate plane. The formation of three orientational variants is consistent with the symmetry of the basal Al{sup 2}O{sub 3} surface. The dislocation network observed at the o-anorthite/Al{sub 2}O{sub 3} interface indicates that nucleation and growth of the anorthite occurs directly on the substrate surface without an intervening interfacial amorphous layer. The study of anorthite-glass films is important because they are present in liquid-phase-sintered Al{sub 2}O{sub 3}, and may be devitrified by postsintering heat treatments.
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: pp. 33-42
System Entry Date2009 Dec 16

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