DOE Patents Database - Search Results

Patent Title	Inventor(s)	Issue Date	Patent Number
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate. Method and apparatus for forming conformal SiN.sub.x films	Wang, Qi	11/27/2007	7,300,890
A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer. Ultra-high current density thin-film Si diode	Wang, Qi	04/22/2008	7,361,406
A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer. Ultra-high current density thin-film Si diode	Wang , Qi	04/22/2008	7,361,406
In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2. Method for passivating crystal silicon surfaces	Wang, Qi , Wang, Tihu , Page, Matthew R. , Yan, Yanfa	12/08/2009	7,629,236
In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2. Method for passivating crystal silicon surfaces	Wang, Qi , Wang, Tihu , Page, Matthew R. , Yan, Yanfa	12/08/2009	7,629,236
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness. Method for rapid, controllable growth and thickness, of epitaxial silicon films	Wang, Qi , Stradins, Paul , Teplin, Charles , Branz, Howard M.	10/13/2009	7,601,215
A method of biosensor-based detection of toxins comprises the steps of providing at least one time-dependent control signal generated by a biosensor in a gas or liquid medium, and obtaining a time-dependent biosensor signal from the biosensor in the gas or liquid medium to be monitored or analyzed for the presence of one or more toxins selected from chemical, biological or radiological agents. The time-dependent biosensor signal is processed to obtain a plurality of feature vectors using at least one of amplitude statistics and a time-frequency analysis. At least one parameter relating to toxicity of the gas or liquid medium is then determined from the feature vectors based on reference to the control signal. Biosensor method and system based on feature vector extraction	Greenbaum, Elias , Rodriguez, Jr., Miguel , Qi, Hairong , Wang, Xiaoling	04/17/2012	8,158,377
A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage. Stacked switchable element and diode combination with a low breakdown switchable element	Wang, Qi , Ward, James Scott , Hu, Jian , Branz, Howard M.	06/19/2012	8,203,154

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