DOE Patents Database - Search Results

Patent Title	Inventor(s)	Issue Date	Patent Number
A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell. Front contact solar cell with formed electrically conducting layers on the front side and backside	Cousins, Peter John	06/26/2012	8,207,444
A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection. Front contact solar cell with formed emitter	Cousins, Peter John	07/17/2012	8,222,516
Ablation of film stacks in solar cell fabrication processes	Harley, Gabriel , Kim, Taeseok , Cousins, Peter John	07/03/2012	8,211,731
A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source. High throughput solar cell ablation system	Harley, Gabriel , Pass, Thomas , Cousins, Peter John , Viatella, John	09/11/2012	8,263,899
A solar cell fabrication process includes printing of dopant sources over a polysilicon layer over backside of a solar cell substrate. The dopant sources are cured to diffuse dopants from the dopant sources into the polysilicon layer to form diffusion regions, and to crosslink the dopant sources to make them resistant to a subsequently performed texturing process. To prevent counter doping, dopants from one of the dopant sources are prevented from outgassing and diffusing into the other dopant source. For example, phosphorus from an N-type dopant source is prevented from diffusing to a P-type dopant source comprising boron. Fabrication of solar cells with counter doping prevention	Dennis, Timothy D , Li, Bo , Cousins, Peter John	02/19/2013	8,377,738
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage. Trench process and structure for backside contact solar cells with polysilicon doped regions	De Ceuster, Denis , Cousins, Peter John , Smith, David D.	12/14/2010	7,851,698

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