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A display and projection apparatus includes an electrochromic material and a photoconductive material deposited in tandem used in conjunction with a light filtering means for filtering light transmitted through the electrochromic material. When an electric field is applied across the electrochromic material and the photoconductive material, light that is incident onto the photoconductive material through the surface of the projection apparatus causes the photoconductive material to conduct current locally in proportion to the amount of light incident on the photoconductive material. The flow of current causes the underlying portions of the electrochromic material to switch from an opaque state to a clear or transmissive state, thereby allowing back-light to propagate through the electrochromic material to create a visible image on the surface of the projection apparatus. Reversal of the electric field causes the electrochromic material to revert back to its opaque state, thereby blocking the transmission of back-light and effectively erasing the image from the surface of the projection apparatus.

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.