Method of fabricating an optoelectronic device having a bulk heterojunction
Abstract
A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.
- Inventors:
-
- Princeton, NJ
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 984975
- Patent Number(s):
- 7419846
- Application Number:
- 10/824,288
- Assignee:
- The Trustees of Princeton University (Princeton, NJ)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-98GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Shtein, Max, Yang, Fan, and Forrest, Stephen R. Method of fabricating an optoelectronic device having a bulk heterojunction. United States: N. p., 2008.
Web.
Shtein, Max, Yang, Fan, & Forrest, Stephen R. Method of fabricating an optoelectronic device having a bulk heterojunction. United States.
Shtein, Max, Yang, Fan, and Forrest, Stephen R. Tue .
"Method of fabricating an optoelectronic device having a bulk heterojunction". United States. https://www.osti.gov/servlets/purl/984975.
@article{osti_984975,
title = {Method of fabricating an optoelectronic device having a bulk heterojunction},
author = {Shtein, Max and Yang, Fan and Forrest, Stephen R},
abstractNote = {A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 02 00:00:00 EDT 2008},
month = {Tue Sep 02 00:00:00 EDT 2008}
}
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